Patents by Inventor Jian Rong Dong

Jian Rong Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a modified semiconductor having a plurality of band gaps
    Patent number: 7223623
    Abstract: A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: May 29, 2007
    Assignees: Agency for Science, Technology and Research, National University of Singapore
    Inventors: Jing Hua Teng, Soo Jin Chua, Jian Rong Dong
  • Method for forming a modified semiconductor having a plurality of band gaps
    Publication number: 20050153473
    Abstract: A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface.
    Type: Application
    Filed: April 4, 2003
    Publication date: July 14, 2005
    Inventors: Jing Hua Teng, Soo Jin Chua, Jian Rong Dong