Patents by Inventor Jian Shiang Liang

Jian Shiang Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circuit and method for controlling leakage current in random access memory devices
    Patent number: 8649236
    Abstract: A circuit for controlling leakage current in random access memory devices comprises a pre-charge equalization circuit. The pre-charge equalization circuit provides a pre-charge voltage to a pair of complementary bit lines of a memory cell of a random access memory device in accordance with a pre-charge signal. When the memory cell is in a self-refresh mode, the pre-charge signal is activated by a periodically triggered pre-charge request and also activated before and after the memory cell is self-refreshed.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: February 11, 2014
    Assignee: Elite Semiconductor Memory Technology Inc.
    Inventors: Chung Zen Chen, Ying Wei Jan, Jian Shiang Liang
  • CIRCUIT AND METHOD FOR CONTROLLING LEAKAGE CURRENT IN RANDOM ACCESS MEMORY DEVICES
    Publication number: 20120287739
    Abstract: A circuit for controlling leakage current in random access memory devices comprises a pre-charge equalization circuit. The pre-charge equalization circuit provides a pre-charge voltage to a pair of complementary bit lines of a memory cell of a random access memory device in accordance with a pre-charge signal. When the memory cell is in a self-refresh mode, the pre-charge signal is activated by a periodically triggered pre-charge request and also activated before and after the memory cell is self-refreshed.
    Type: Application
    Filed: May 11, 2011
    Publication date: November 15, 2012
    Applicant: Elite Semiconductor Memory Technology Inc.
    Inventors: Chung Zen Chen, Ying Wei Jan, Jian Shiang Liang