Patents by Inventor Jian-Sin Tsai

Jian-Sin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof
    Patent number: 7837841
    Abstract: Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: November 23, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kei-Wei Chen, Mu-Han Cheng, Jian-Sin Tsai, Ying-Lang Wang
  • APPARATUSES FOR ELECTROCHEMICAL DEPOSITION, CONDUCTIVE LAYER, AND FABRICATION METHODS THEREOF
    Publication number: 20080223724
    Abstract: Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 18, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kei-Wei Chen, Mu-Han Cheng, Jian-Sin Tsai, Ying-Lang Wang