Abstract: A system for controlling the impedances of circuits on an integrated circuit chip is provided. At least one circuit is selected to operate as a p-channel reference circuit, and at least one circuit is selected to operate as an n-channel reference circuit. Other circuits are selected to operate as circuits and/or line termination circuits. A digitally controlled impedance (DCI) circuit controls the p-channel reference circuit to determine a desired configuration of p-channel transistors for use in the circuits. The DCI circuit further controls the n-channel reference circuit to determine a desired configuration of n-channel transistors for use in the circuits. The DCI circuit takes into account such factors as resistances of p-channel transistors in the p-channel reference circuit, resistances of n-channel transistors in the n-channel reference circuit, as well as temperature, voltage and process variations.

Abstract: A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.

Abstract: A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.

Abstract: An integrated circuit including a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias the MESFET into a non-conduction state, a method of driving the MESFET and a power converter employing the integrated circuit and method. In one embodiment, the integrated circuit includes a driver including a bias capacitor integrated with the MESFET. The driver is configured to apply a positive voltage to bias the MESFET into a conduction state, and apply the negative voltage to bias the MESFET into the non-conduction state without employing an external negative bias source.