Patents by Inventor Jian-Wei Tang

Jian-Wei Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12040235
    Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ching Lee, Hsin-Han Tsai, Shih-Hang Chiu, Tsung-Ta Tang, Chung-Chiang Wu, Hung-Chin Chung, Hsien-Ming Lee, Da-Yuan Lee, Jian-Hao Chen, Chien-Hao Chen, Kuo-Feng Yu, Chia-Wei Chen, Chih-Yu Hsu
  • Patent number: D758988
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: June 14, 2016
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Kai An, Jian-Wei Tang