Patents by Inventor Jian X. Shen

Jian X. Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9368134
    Abstract: A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: June 14, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ming Sun, Dehua Han, Jose A. Medina, Ming Jiang, Ying Hong, Feng Liu, Jian X. Shen
  • Patent number: 9287494
    Abstract: A method for fabricating a magnetic tunnel junction (MTJ) is disclosed. The process involves annealing a stack that includes a tunnel barrier layer and cooling the stack under vacuum immediately after annealing. At least one overlayer is deposited on the tunnel barrier layer to form the MTJ.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: March 15, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: MingLang Yan, Xiaobo Huang, Jian X. Shen
  • Patent number: 8441756
    Abstract: A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: May 14, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ming Sun, Dehua Han, Jose A. Medina, Ming Jiang, Ying Hong, Feng Liu, Jian X. Shen
  • Patent number: 8336194
    Abstract: A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: December 25, 2012
    Assignee: Western Digital (Fremont), LLC
    Inventors: Lu Yuan, Jian X. Shen, Geoffrey W. Anderson, Christopher Ng
  • Patent number: 8116043
    Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (TBD) and a first exchange energy. A second sublayer has a second TBD and a second exchange energy. The first sublayer is between the pinning layer and second sublayer. The first TBD is greater than the second TBD. The first exchange energy is less than the second exchange energy.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: February 14, 2012
    Assignee: Western Digital (Fremont), LLC
    Inventors: Qunwen Leng, Jian X. Shen, Feng Liu, Geoffrey W. Anderson
  • Publication number: 20110135961
    Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (TBD) and a first exchange energy. A second sublayer has a second TBD and a second exchange energy. The first sublayer is between the pinning layer and second sublayer. The first TBD is greater than the second TBD. The first exchange energy is less than the second exchange energy.
    Type: Application
    Filed: December 9, 2009
    Publication date: June 9, 2011
    Applicant: WESTERN DIGITAL (FREMONT), LLC
    Inventors: QUNWEN LENG, JIAN X. SHEN, FENG LIU, GEOFFREY W. ANDERSON
  • Publication number: 20110102949
    Abstract: A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.
    Type: Application
    Filed: November 3, 2009
    Publication date: May 5, 2011
    Applicant: WESTERN DIGITAL (FREMONT), LLC
    Inventors: LU YUAN, JIAN X. SHEN, GEOFFREY W. ANDERSON, CHRISTOPHER NG
  • Patent number: 7477490
    Abstract: A differentiated sensor includes a pair of magnetic layers having magnetization directions that are substantially antiparallel in a quiescent state. At least one of the magnetic layers is a free layer. A spacer layer is disposed between the pair of magnetic layers.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: January 13, 2009
    Assignee: Seagate Technology LLC
    Inventors: Kaizhong Gao, Jian X. Shen, Shaoping Li, Song S. Xue, Juan J. Fernandez-de-Castro