Patents by Inventor Jian-You Lin

Jian-You Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130105204
    Abstract: A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.
    Type: Application
    Filed: March 12, 2012
    Publication date: May 2, 2013
    Applicant: National Tsing Hua University
    Inventors: Jenn-Chang HWANG, Chao-Ying HSIEH, Chwung-Shan KOU, Chung-Hwa WANG, Li-Shiuan TSAI, Lung-Kai MAO, Shih-Jie JIAN, Jian-You LIN, Chun-Yi LEE
  • Patent number: 8309968
    Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: November 13, 2012
    Assignee: National Tsing Hua University
    Inventors: Jenn-Chang Hwang, Chwung-Shan Kou, Jian-You Lin
  • Publication number: 20110297962
    Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.
    Type: Application
    Filed: July 30, 2010
    Publication date: December 8, 2011
    Inventors: Jenn-Chang HWANG, Chwung-Shan KOU, Jian-You LIN