Abstract: An optical sensing device is provided. The optical sensing device includes a substrate, a housing, a light receiver, and an optical structure. The housing is disposed on an upper surface of the substrate, and the housing and the substrate collectively define a cavity. The light receiver is disposed in the cavity, and the housing surrounds the light receiver. The optical structure is disposed on an upper surface of the light receiver, and the optical structure includes a plurality of concave portions and a plurality of convex portions. The concave portions and the convex portions are alternately arranged to form an array, and a light transmittance of the concave portions is greater than a light transmittance of the convex portions.

Abstract: A wearable optoelectronic sensing device includes a textile layer, a substrate layer, a light emitter, a plurality of light receivers, and a cover layer. The substrate layer is disposed on the textile layer. The plurality of light receivers is disposed on the surface of the substrate layer, formed as an array, and includes a first light receiver and a second light receiver. The light emitter is disposed at a geometric center of the array. A sensing wavelength of the second light receiver is greater than that of the first light receiver. A distance between the second light receiver and the light emitter is greater than a distance between the first light receiver and the light emitter. The cover layer is disposed on the substrate layer and includes a plurality of openings; the position of each corresponds to position of the light emitter and the position of each light receiver.

Abstract: An embodiment of present application discloses a light sensing module for use with a reflector. The light sensing module includes a housing, an optical transceiver, and a shading hood. The housing includes a through hole. The optical transceiver includes a light source, a light sensor, and a separating wall. The light source is disposed in the housing for emitting a first light. The first light can pass through the housing via the through hole, and be reflected as a second light by the reflector. The light sensor is disposed in the housing for receiving the second light. The separating wall is disposed between the light source and the light sensor. The shading hood is located at a position corresponding to the light sensor, and has an opening positioned in an optical path of the second light.

Abstract: Semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device comprises a substrate with a plurality of isolation structures formed therein, defining first and second areas over the substrate. A transistor is formed on a portion of the substrate in the first and second areas, respectively, wherein the transistor in the second area is formed with merely a pocket doping region in the substrate adjacent to a drain region thereof. A first dielectric layer is formed over the substrate, covering the transistor formed in the first and second areas. A plurality of first contact plugs is formed through the first dielectric layer, electrically connecting a source region and a drain region of the transistor in the second area, respectively. A second dielectric layer is formed over the first dielectric layer with a capacitor formed therein, wherein the capacitor electrically connects one of the first contact plugs.

Abstract: One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.

Abstract: One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.