Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: A system and a method for detecting irregular bone defects during dental implant osseointegration process. The system comprises a detecting abutment, an ultrasonic driver, a signal receiving and analyzing device. When dental detection is performed, the detecting abutment is disposed on a substrate holder of a dental implant. The ultrasonic driver configures the piezoelectric transducers disposed on the detecting abutment to produce ultrasonic wave and transmits the ultrasonic wave to the contact surface between the dental implant and the alveolus bone. The piezoelectric transducers can receive the reflected wave caused by the each portion of the contact surface reflecting the ultrasonic wave and transform the reflected wave into time domain voltage signal. The signal receiving and analyzing device receives the time domain voltage signal to determine the depth, the severity and the location of the irregular bone defects of the contact surface.

Abstract: A system and a method for detecting irregular bone defects during dental implant osseointegration process. The system comprises a detecting abutment, an ultrasonic driver, a signal receiving and analyzing device. When dental detection is performed, the detecting abutment is disposed on a substrate holder of a dental implant. The ultrasonic driver configures the piezoelectric transducers disposed on the detecting abutment to produce ultrasonic wave and transmits the ultrasonic wave to the contact surface between the dental implant and the alveolus bone. The piezoelectric transducers can receive the reflected wave caused by the each portion of the contact surface reflecting the ultrasonic wave and transform the reflected wave into time domain voltage signal. The signal receiving and analyzing device receives the time domain voltage signal to determine the depth, the severity and the location of the irregular bone defects of the contact surface.

Abstract: A brightness enhancement film includes a substrate, a plurality of curved prism units and a plurality of light scattering particles. The curved prism units are extended in parallel and formed on a first surface of the substrate. Each of the curved prism units includes at least one meandering surface to provide with changes in curvature. Thus, the meandering surface of the curved prism unit is able to refract incident light in two dimensions with respect to the substrate that may enhance entire light-collecting efficiency in two dimensions. The light scattering particles are disposed in the curved prism units.