Abstract: A semiconductor device includes a substrate, a first dielectric layer, a channel layer and source/drain electrodes. The first dielectric layer is over the substrate. The channel layer is over the first dielectric layer. Source/drain electrodes are over the channel layer. The source/drain electrodes comprise a 2D semimetal material. The channel layer comprises a 2D semiconductor material interfacing the 2D semimetal material of the source/drain electrodes.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) method includes loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer.

Abstract: An integrated circuit device includes a substrate, a first transition metal dichalcogenide layer over the substrate, a dielectric layer over the first transition metal dichalcogenide layer, a first gate electrode, and a first source contact and a first drain contact. The first transition metal dichalcogenide layer has a surface roughness greater than 0.5 nm and less than 1 nm. The first gate electrode is over the dielectric layer and a first portion of the first transition metal dichalcogenide layer. The first source contact and the first drain contact are respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer. The first portion of the first transition metal dichalcogenide layer is between the second and third portions of the first transition metal dichalcogenide layer.

Abstract: A method for forming an integrated circuit device is provided. The method includes forming a transistor over a frontside of a substrate; forming an interconnect structure over the transistor; depositing a first transition metal layer over the interconnect structure; performing a plasma treatment to turn the first transition metal layer into a first transition metal dichalcogenide layer; forming a dielectric layer over the first transition metal dichalcogenide layer; forming a first gate electrode over the dielectric layer and a first portion of the first transition metal dichalcogenide layer; and forming a first source contact and a first drain contact respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer, the first portion of the first transition metal dichalcogenide layer being between the second and third portions of the first transition metal dichalcogenide layers.

Abstract: A scrolling system for a window curtain includes a transmission device connected between a shaft to which the curtain is wrapped, and a fixed frame fixed. The transmission device includes a housing in which a first transmission unit and a second transmission unit are accommodated. The first transmission unit includes a first bevel gear which is engaged with a second bevel gear of the second transmission unit. The shaft is connected to the second transmission unit. The first transmission unit includes a loop which is located beyond the housing. A driving rod is hooked to the loop and drives the first bevel gear which drives the second bevel gear so that the second transmission unit is rotated, such that the shaft is rotated to operate the curtain up and down.

Abstract: The invention provides a power supply including at least one power output port, at least one status alert component, and at least one output port status monitoring module. The status alert component generates at least one visual prompt based on an alert signal. The output port status monitoring module includes at least one temperature sensor adjacent to the power output port, a microcontroller connected to the temperature sensor and sensing an output current from the power output port, and a reset signal generator connected to the microcontroller. The microcontroller comprises at least one port status alert condition that takes a temperature and the output current of the power output port as decision factors. The microcontroller outputs the alert signal to the status alert component when the port status alert condition is met and maintains the status until a reset signal provided by the reset signal generator is received.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is on the semiconductor substrate. The source/drain structure is adjacent to the gate structure. The contact lands on the source/drain structure. The dielectric layer spas the contact and the gate structure. The metal line extends through the dielectric layer to the contact. The metal line includes a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. The magnetic layer has a greater permeability coefficient than the filling metal.

Abstract: A window curtain includes a rotary tube located in the top rail, and a curtain is connected between the top rail and the bottom rail. A scrolling device is located in the tube and includes a torsion spring mounted to a fixed shaft. A sleeve is connected to the fixed shaft. An adjustment unit is connected to the fixed shaft. The torsion spring is located between the sleeve and the adjustment unit. The adjustment unit includes a housing, a tubular part and a resilient member. The first end of the torsion spring is fixed to the tubular part. The torsion spring is compressed or released by rotating the adjustment unit. The tubular part includes ratchets which are engaged with a pawl in the housing to maintain the tubular part and the torsion spring from rotating reversely.

Abstract: A method for forming an integrated circuit device is provided. The method includes forming a transistor over a frontside of a substrate; forming an interconnect structure over the transistor; depositing a first transition metal layer over the interconnect structure; performing a plasma treatment to turn the first transition metal layer into a first transition metal dichalcogenide layer; forming a dielectric layer over the first transition metal dichalcogenide layer; forming a first gate electrode over the dielectric layer and a first portion of the first transition metal dichalcogenide layer; and forming a first source contact and a first drain contact respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer, the first portion of the first transition metal dichalcogenide layer being between the second and third portions of the first transition metal dichalcogenide layers.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) method includes loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer.

Abstract: A scrolling system for a window curtain includes a transmission device connected between a shaft to which the curtain is wrapped, and a fixed frame fixed. The transmission device includes a housing in which a first transmission unit and a second transmission unit are accommodated. The first transmission unit includes a first bevel gear which is engaged with a second bevel gear of the second transmission unit. The shaft is connected to the second transmission unit. The first transmission unit includes a loop which is located beyond the housing. A driving rod is hooked to the loop and drives the first bevel gear which drives the second bevel gear so that the second transmission unit is rotated, such that the shaft is rotated to operate the curtain up and down.

Abstract: A window curtain includes a rotary tube located in the top rail, and a curtain is connected between the top rail and the bottom rail. A scrolling device is located in the tube and includes a torsion spring mounted to a fixed shaft. A sleeve is connected to the fixed shaft. An adjustment unit is connected to the fixed shaft. The torsion spring is located between the sleeve and the adjustment unit. The adjustment unit includes a housing, a tubular part and a resilient member. The first end of the torsion spring is fixed to the tubular part. The torsion spring is compressed or released by rotating the adjustment unit. The tubular part includes ratchets which are engaged with a pawl in the housing to maintain the tubular part and the torsion spring from rotating reversely.

Abstract: A method includes loading a wafer into a processing chamber, wherein the processing chamber is wound by a coil, and the coil is coupled to an RF system; supplying an aromatic hydrocarbon precursor into the processing chamber; after supplying the aromatic hydrocarbon precursor, turning on an RF power of the RF system to decompose the aromatic hydrocarbon precursor into active radicals and cyclize the active radicals into a graphene layer over a metal layer on the wafer; and after an entirety of the metal layer being covered by the graphene layer, turning off the RF power of the RF system to stop forming the graphene layer.

Abstract: A method includes loading a wafer into a processing chamber, wherein the processing chamber is wound by a coil, and the coil is coupled to an RF system; supplying an aromatic hydrocarbon precursor into the processing chamber; after supplying the aromatic hydrocarbon precursor, turning on an RF power of the RF system to decompose the aromatic hydrocarbon precursor into active radicals and cyclize the active radicals into a graphene layer over a metal layer on the wafer; and after an entirety of the metal layer being covered by the graphene layer, turning off the RF power of the RF system to stop forming the graphene layer.

Abstract: An isolated nucleic acid includes a sequence selected from the group consisting of the following: (i) a first nucleotide sequence of SEQ ID NO.: 7, SEQ ID NO.: 3, SEQ ID NO.: 9, or SEQ ID NO.: 5; (ii) a second nucleotide sequence encoding the amino acid sequence of SEQ ID NO.: 6, SEQ ID NO.: 4, SEQ ID NO.: 8, or SEQ ID NO.: 10; and (iii) a third nucleotide sequence complementary to the first nucleotide sequence or the second nucleotide sequence.

Abstract: In some embodiments, in a method, a netlist is received. The netlist comprises a subcircuit that comprises a device and a rule check module. The rule check module specifies a plurality of terminals of the device subject to an operating space, and at least one parameter that controls a non-rectangular boundary of the operating space. The netlist is simulated to obtain simulation data associated with the terminals of the device. The operating space that has the non-rectangular boundary is formed by using the at least one parameter. The simulation data is checked against the operating space. A situation in which the checked simulation data does not fall within the operating space is reflected.

Abstract: In some embodiments, in a method, a netlist is received. The netlist comprises a subcircuit that comprises a device and a rule check module. The rule check module specifies a plurality of terminals of the device subject to an operating space, and at least one parameter that controls a non-rectangular boundary of the operating space. The netlist is simulated to obtain simulation data associated with the terminals of the device. The operating space that has the non-rectangular boundary is formed by using the at least one parameter. The simulation data is checked against the operating space. A situation in which the checked simulation data does not fall within the operating space is reflected.

Abstract: An isolated nucleic acid includes a sequence selected from the group consisting of the following: (i) a first nucleotide sequence of SEQ ID NO.: 1, SEQ ID NO.: 2, SEQ ID NO.: 3, SEQ ID NO.: 4, or SEQ ID NO.: 5; (ii) a second nucleotide sequence encoding an amino acid sequence of SEQ ID NO.: 6, SEQ ID NO.: 7, SEQ ID NO.: 8, SEQ ID NO.: 9, or SEQ ID NO.: 10; and (iii) a third nucleotide sequence complementary to the first nucleotide sequence or the second nucleotide sequence.

Abstract: An active TFT circuit structure with current scaling function is disclosed, which includes a current source, a data line, a scan line, a direct current voltage source, capacitors and four transistors, wherein the capacitors form a cascade structure. During the ON-state, the two of the transistors are turn-on based on the voltage provided by the scan line, so that the data current provided by the current source flows through the data line-and the transistor which is one of the opened transistors, thereby arriving an emitting light element and the transistor connected to the emitting light element. When the pixel circuit changes from ON- to OFF-state, the voltage of the node between the storage capacitors reduces due to the feed-through effect of one of storage capacitor, thereby reducing the driving current of the emitting light element. Therefore, it can be achieved the current scaling function.

Abstract: An active TFT circuit structure with current scaling function is disclosed, which includes a current source, a data line, a scan line, a direct current voltage source, capacitors and four transistors, wherein the capacitors form a cascade structure. During the ON-state, the two of the transistors are turn-on based on the voltage provided by the scan line, so that the data current provided by the current source flows the data line and the transistor which is one of the opened transistors, thereby arriving an emitting light element and the transistor connected to the emitting light element. When the pixel circuit changes from ON- to OFF-state, the voltage of the node between the storage capacitors reduces due to the feed-through effect of one of storage capacitor, thereby reducing the driving current of the emitting light element. Therefore, it can be achieved the current scaling function.