Abstract: The present disclosure provides a method for optimizing mask parameters, and the method includes: acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters including a mask thickness and an initial mask sidewall angle; generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; the multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness; obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts.

Abstract: Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.

Abstract: A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1, so that the photolithographic coating forms an optical structure with a high reflection coefficient. The photolithographic coating is exposed to a light having a target wavelength through a mask. The to-be-connected structure is reflected in the photolithographic coating, and hence serves as another mask and is imaged to the photolithographic film. A pattern of the mask is simultaneously imaged to the photolithographic film. That is, both the to-be-connected structure and the pattern of the mask are imaged to a target region of the photolithographic film, and the target region corresponds to the to-be-connected structure.