Abstract: The instant application relates to a polysiloxane-based coating composition, comprising: Polysiloxane of formula I wherein each R1 is independently a hydroxyl group or an alkyl, aryl or alkoxy group having up to 6 carbon atoms, each R2 independently is hydrogen or alkyl or aryl group having up to 6 carbon atoms, and n is selected so that the molecular weight for the polysiloxane is 400 to 10000; a non-aromatic epoxide resin having more than one 1, 2-epoxide group per molecule with an epoxide equivalent weight of 100 to 5000; a multi-functional (meth) acrylate monomer; and a cure system comprising at least one alkoxy functional aminosilane. Furthermore, it also relates to a method of coating surface using said coating composition and the substrate coated therewith.

Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.