Abstract: A continuous membrane-covered aerobic fermentation system and an application method thereof are disclosed. The system comprises: a fermentation trough which is formed by underground walls of trough, above-ground walls of trough, and a trough bottom; a membrane changing machine configured for performing membrane uncovering, membrane laying, or membrane changing treatments on a semipermeable membrane covered on the fermentation trough and materials in the trough; a pile turning machine configured for direct turning and further mixing the materials under the membrane without uncovering the membrane, and gradually shifting and conveying the materials to another fixed position; and a condensate collecting system configured for continuously collecting the condensate on a inner surface of the semipermeable membrane in real time and guiding out the condensate.

Abstract: In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.

Abstract: A method of forming a semiconductor device may include providing a semiconductor substrate, the semiconductor substrate comprising an inner region of a first polarity, and a surface layer, disposed on the inner region, wherein the surface layer comprises a second polarity, opposite the first polarity. The method may further include removing a surface portion of the semiconductor substrate using a saw, wherein a trench region is formed within the semiconductor substrate, and cleaning the trench region using a chemical process, wherein at least one mesa structure is formed within the semiconductor substrate.

Abstract: In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.