Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes an array substrate, which includes a substrate, a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer. The substrate has a substrate surface. The first conductive layer is located on the substrate surface. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a first sputtering layer, a second sputtering layer, and a third sputtering layer. The second insulating layer is located on the second conductive layer. The second sputtering layer is located between the first and third sputtering layers, and includes a first metal element. The first sputtering layer includes the first metal element and a second metal element. The third sputtering layer includes the first metal element and a third metal element.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes an array substrate, which includes a substrate, a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer. The substrate has a substrate surface. The first conductive layer is located on the substrate surface. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a first sputtering layer, a second sputtering layer, and a third sputtering layer. The second insulating layer is located on the second conductive layer. The second sputtering layer is located between the first and third sputtering layers, and includes a first metal element. The first sputtering layer includes the first metal element and a second metal element. The third sputtering layer includes the first metal element and a third metal element.

Abstract: An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.

Abstract: An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.