Abstract: The invention relates to an operation diagram-based method for automatically changing a route to turn back in case of interruption. The method obtains an alternative turn-back point according to the position of a fault point and the information of a line turn-back station, calculates a corresponding turn-back plan of the alternative turn-back point according to an operation diagram of the current day, and finally automatically changes an online train route according to the new turn-back plan, so as to realize automatic turn-back of a train after route adjustment in case of interruption. Compared with the prior art, the method has the advantage of being able to keep the compatibility with an existing operation diagram while quickly changing a route in case of partial line interruption, so as to facilitate quick recovery of planned operation after a fault is removed.

Abstract: A method and apparatus for implementing a virtual performance partner are provided. The method includes collecting audio frame data performed by a performer; and for each piece of current audio frame data collected, performing: converting the piece of current audio frame data collected into a current digital score, matching the current digital score with a range of digital scores in a repertoire, and determining a matching digital score in the range of digital scores that matches the current digital score; positioning a position of the matching digital score in the repertoire, and determining a start time of playing a cooperation part of music in a next bar of the matching digital score in the repertoire for a performance partner.

Abstract: According to implementations of the subject matter described herein, a solution is proposed for super-resolution image reconstructing. According to the solution, an input image with first resolution is obtained. An invertible neural network is trained using the input image, wherein the invertible neural network is configured to generate an intermediate image with second resolution and first high-frequency information based on the input image, the second resolution being lower than the first resolution. Subsequently, an output image with third resolution is generated based on the input image and second high-frequency information by using an inverse network of the trained invertible neural network, the second high-frequency information conforming to a predetermined distribution, and the third resolution being higher than the first resolution. The solution can effectively process a low-resolution image obtained by an unknown downsampling method, thereby obtaining a high-quality and high-resolution image.

Abstract: A composite material structure includes a first metal member and a second metal member bonding to the first metal member. A bonding surface is formed therebetween. A first hole is through the first metal member. A circular bonding line is formed at a junction of a wall of the first hole and the bonding surface. A sleeve protrudes from the second metal member into the first hole, and covers the bonding line. A groove indents from the first metal member. The groove has a bottom surface located in the same plane with a top surface of the sleeve. A processing method of the composite material structure is also provided. The sleeve covers the bonding line between the first metal member and the second metal member, which allows the composite material structure to provide an improved sealing performance.

Abstract: Provided is a novel PDGFR kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. Further provided are use and a method of the compound of formula (I) for preventing or treating conditions associated with PDGFR kinase activity, particularly use and a method for preventing or treating conditions associated with PDGFR? and/or PDGFR? kinase activity.

Abstract: A method for displaying a virtual scene, includes: displaying a virtual scene image on a terminal screen, the virtual scene image including a controlled virtual object in a virtual scene, the controlled virtual object being a virtual object currently controlled by a terminal; and displaying the controlled virtual object at a target position of the terminal screen when the controlled virtual object belongs to a first camp, the first camp being a camp located at the upper right of the virtual scene, the target position being shifted to an upper right position relative to a central position of the terminal screen.

Abstract: This application discloses a method and apparatus for displaying a picture of a virtual environment, a device, and a medium, and relates to the field of virtual environments.

Abstract: A virtual object control method is provided. In the method, skill casting is controlled by using a map control, and a corresponding second virtual scene can be displayed when a first trigger operation is performed on the map control, and in response to a casting operation on a target skill, a skill casting target can be determined according to an operation position corresponding to the casting operation. In this case, the selection range of the skill casting target may not be limited to the virtual scene with a virtual object as a center, the casting operation has a higher degree of freedom, and the selection can be accurately performed according to the actual case of a desired casting position when the skill is cast, rather than a rough estimation in the currently displayed virtual scene. Apparatus and non-transitory computer readable storage medium counterpart embodiments are also provided.

Abstract: Embodiments of the present disclosure provides method, device, and storage medium for flight trajectory replay. The method includes obtaining flight state data collected by an aircraft at a plurality of flight times, and generating an original flight path based on the flight state data, the flight state data including at least one of a position, a speed, or an acceleration of the aircraft; determining a safe speed of each position in the original flight path based on the original flight path; and generating a replay trajectory based on the safe speed of each position, and generating a control instruction based on the replay trajectory for controlling the aircraft to fly along the replay trajectory. While generating the replay trajectory, the aircraft can fly at a constant speed during the replay.

Abstract: The present application provides a device, a mobile robot, and a system to operate a method for navigation path tracking control. The device includes: one or more storage media, storing a set of instructions for tracking and controlling a navigation path; and one or more processors in communication with the one or more storage media, wherein during operation the one or more processors execute the set of instructions to: obtain a location of a mobile robot; determine, in a navigation path, a target point that satisfies a preset location relationship with the location of the mobile robot; and control the mobile robot to move toward the target point in the navigation path. In this way, accurate tracking control is implemented on the navigation path of the mobile robot, and accuracy and robustness of tracking control are improved.

Abstract: A silicon-on-insulator device having multiple crystal orientations is disclosed. In one embodiment, the silicon-on-insulator device includes a substrate layer, an insulating layer disposed on the substrate layer, a first silicon layer, and a strained silicon layer. The first silicon layer has a first crystal orientation and is disposed on a portion of the insulating layer, and the strained silicon layer is disposed on another portion of the insulating layer and has a crystal orientation different from the first crystal orientation.

Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

Abstract: A magnetic device includes a housing, a bobbin, a coil, and a magnetic core. The housing has a side plate and a bottom plate. The side plate stands on the bottom plate and forms a space with the bottom plate. The bobbin is at least partially located in the space. The bobbin has a cylinder. The coil is wound around the cylinder. The coil has a portion facing the bottom plate. The magnetic core includes a center column, a side column, and a connecting portion. The center column is located in the cylinder. The side column is located outside the coil and away from the bottom plate, such that the coil is located between the side column and the bottom plate. The connecting portion connects the center column and the side column.

Abstract: A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement. In this way, it is possible to adjust the effective work function of the metal gate in a relatively flexible way.

Abstract: A method of making a semiconductor device begins with a semiconductor wafer that includes a first semiconductor layer overlying a second semiconductor layer. A first trench is etched in the semiconductor wafer. The first trench is filled with insulating material. A second trench is etched within the first trench and through the insulating material, such that insulating material remains along sidewalls of the first trench. The second trench exposes a portion of the second insulating layer. A semiconductor layer can then be grown within the second trench using the second semiconductor layer as a seed layer.

Abstract: The present disclosure provides a semiconductor device, comprising: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an hollow cavity below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer. Such a device structure of the present disclosure incorporate the respective advantages of the bulk silicon device and the SOI device, and has characteristics of lower cost, smaller leakage current, lower power consumption, fast speed, simple process and high integration level. Meanwhile, the floating body effect and the spontaneous heating effect are eliminated as compared with the SOI device.

Abstract: The present invention discloses a 2-bit flash memory device comprising a P-type substrate which has a source and a drain, and first and second floating gates which are successively located on the upper and lower sides of the substrate. The first and second floating gates are N-type doped polysilicon, the first control gate is P-type polysilicon, and the second control gate is N-type polysilicon. The present invention can expand the storage capacity per unit area of a floating gate flash memory, thus reducing the dimension of the floating gate flash memory.

Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

Abstract: A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.