Patents by Inventor Jiang Yin
Jiang Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250241253Abstract: A method is provided for obtaining new distant germplasm of intergeneric hybridized potato based on grafting-mentor, including the following steps: (1) using young branches, which are growing well, free of diseases, non-lignified, and from an upper part of Lycium as rootstock; (2) using seedlings of diploid primitive cultivated potato with 2-3 unfolded leaves as scion; (3) grafting; (4) conducting post-grafting management; (5) obtaining distant hybridized germplasm by using potato flower buds from the grafted plants for pollination, obtaining seeds of potato varieties after self-fertility, performing pre-germination on selfing seeds, obtaining true seed mini-tubers, and using these mini-tubers for further grafting and pollination to obtain distant hybridized seeds, performing tissue culture propagation on the distant hybridized seeds to obtain F1 asexual clone line foundation seeds.Type: ApplicationFiled: January 22, 2025Publication date: July 31, 2025Inventors: Lipan QI, Kuan WANG, Yan FENG, Yating LUO, Lei WANG, Guili WU, Yue LI, Jiang YIN, Yan WANG, Chang LIU
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Publication number: 20240362812Abstract: A volume measurement method and apparatus using a depth camera, and a computer-readable medium, are provided. A first depth image of a reference countertop is acquired which includes coordinate and depth data of pixels, the reference countertop adapted for placement of a measured object. The coordinate and depth data are substituted into countertop empirical equations to obtain simulated images. Each of the countertop empirical equations represent a height variation pattern of the reference countertop. A correlation between each of the simulated images and the first depth image is calculated. A simulated image with the highest correlation is used as a target image of the reference countertop. A countertop height of the reference countertop is obtained based on the target image, a height of the measured object is calculated using the countertop height, and a volume of the measured object is calculated using the height. These disclosures improve accuracy of object volume measurement.Type: ApplicationFiled: April 24, 2022Publication date: October 31, 2024Inventors: Conghan Cao, Jiang Yin, Song Zhang, Chao Fang, Hongqing Song, Zhenyu Dai, Fenping Qian, Huanbing Cheng, Shenhui Wang
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Patent number: 11980042Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET): an n-type semiconductor thin film was set as a buffer layer between pentacene and polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type organic buffer layer is 1˜100 nm. The induced electrons at the interface lead to the reduction of the height of the hole-barrier formed at the interface, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET. The widened distribution region of positive space charges caused by ionized donors in n-type organic buffer layer effectively restricts the back-transfer of holes from polymer to pentacene, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.Type: GrantFiled: July 29, 2020Date of Patent: May 7, 2024Assignee: Nanjing UniversityInventors: Limin Kang, Yiru Wang, Jiang Yin, Yidong Xia, Zhiguo Liu
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Patent number: 11575093Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.Type: GrantFiled: November 24, 2020Date of Patent: February 7, 2023Assignee: NANJING UNIVERSITYInventors: Limin Kang, Yiru Wang, Jiang Yin, Yidong Xia, Zhiguo Liu
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Publication number: 20220069244Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.Type: ApplicationFiled: November 24, 2020Publication date: March 3, 2022Applicant: Nanjing UniversityInventors: Limin Kang, Yiru WANG, Jiang YIN, Yidong Xia, Zhiguo LIU
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Publication number: 20220013739Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET): an n-type semiconductor thin film was set as a buffer layer between pentacene and polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type organic buffer layer is 1˜100 nm. The induced electrons at the interface lead to the reduction of the height of the hole-barrier formed at the interface, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET. The widened distribution region of positive space charges caused by ionized donors in n-type organic buffer layer effectively restricts the back-transfer of holes from polymer to pentacene, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.Type: ApplicationFiled: July 29, 2020Publication date: January 13, 2022Applicant: Nanjing UniversityInventors: Limin Kang, Yiru WANG, Jiang YIN, Yidong Xia, Zhiguo LIU
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Publication number: 20210285069Abstract: The present application relates to a steel for grade R6 offshore mooring chain for use in anchoring and mooring floating bodies with cathodic protection: the chemical composition are C 0.18˜0.24%, N 0.006˜0.024, P 0.005˜0.025, S?0.005, Si 0.15˜0.35, Mn 0.20˜0.40, Cr 1.40˜2.60, Ni 0.80˜3.20, Mo 0.35˜0.75, Cu?0.50, Al?0.02, Ti?0.005, V 0.04˜0.12, Nb 0.02˜0.05, Ca 0.0005˜0.004, O?0.0015, H?0.00015, the balance is Fe: the total content of alloy ?M=(Si+Mn+Cr+Ni+Mo+Cu), 3.4<?M?6.8; the total content of microalloy ?MM=(Ti+Al+Nb+V), 0.065??MM?0.194. The corrosion potential is adjusted to prevent hydrogen embrittlement caused by cathodic overprotection on the basic premise of maintaining the strength, toughness and low corrosion rate of the steel.Type: ApplicationFiled: May 16, 2019Publication date: September 16, 2021Applicant: JIANGYIN XINGCHENG SPECIAL STEEL WORKS CO., LTDInventors: Jiang YIN, Xuejun BAO, Zhenwei LIU, Yun BAI, Xiaohong XU, Ming ZHANG, Haidong FAN, Yao LI, Hongli LI, De CHEN, Guorong ZHU, Guoren HU, Tiehua YAO, Qiuhao GU, Yong CUI, Erxin HUANG, Xuewen LIU, LI Liangliang
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Patent number: 10808396Abstract: A building based on a large-space structure body and a freestanding external envelope structure and a construction method, wherein the building comprises a structure body composed of a vertical-structure reinforced concrete member, a reinforced concrete girder and a reinforced concrete slab, and a freestanding combined external envelope system externally hung in a periphery of the structure body; and the structure body is made of a prefabricated combined reinforcement cage member poured with concrete, the prefabricated combined reinforcement cage member is combined and assembled by a prefabricated vertical-structure reinforcement cage member, a prefabricated girder reinforcement cage member and a prefabricated slab reinforcement cage member, and the prefabricated vertical-structure reinforcement cage member is a prefabricated shear wall reinforcement cage member or a prefabricated column reinforcement cage member.Type: GrantFiled: June 16, 2017Date of Patent: October 20, 2020Assignee: SOUTHEAST UNIVERSITYInventors: Hong Zhang, Junjun Zhang, Meng Cong, Jianing Luo, Cong Liu, Jiang Yin, Shihu Feng
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Publication number: 20190257094Abstract: A building based on a large-space structure body and a freestanding external envelope structure and a construction method, wherein the building comprises a structure body composed of a vertical-structure reinforced concrete member, a reinforced concrete girder and a reinforced concrete slab, and a freestanding combined external envelope system externally hung in a periphery of the structure body; and the structure body is made of a prefabricated combined reinforcement cage member poured with concrete, the prefabricated combined reinforcement cage member is combined and assembled by a prefabricated vertical-structure reinforcement cage member, a prefabricated girder reinforcement cage member and a prefabricated slab reinforcement cage member, and the prefabricated vertical-structure reinforcement cage member is a prefabricated shear wall reinforcement cage member or a prefabricated column reinforcement cage member.Type: ApplicationFiled: June 16, 2017Publication date: August 22, 2019Inventors: Hong ZHANG, Junjun ZHANG, Meng CONG, Jianing LUO, Cong LIU, Jiang YIN, Shihu FENG
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Patent number: 10036570Abstract: A baffle arrangement disposed within the exhaust flue of a fuel-burning water heater promotes heat transfer from exhausted combustion by-products to the water storage chamber. The baffle arrangement has an elongate planar base and plural exhaust-directing fins spaced along opposite sides of the base. Each fin is a planar body extending perpendicularly from the base at an acute upward angle from a longitudinal centerline to a respective side of the base. The fins deflect combustion by-products laterally outwardly within the flue to promote heat transfer. The fins are of selected configurations generally increasing in surface area upwardly along the planar base for selectively controlling pressure drop within the exhaust flue. Hanger tabs project outwardly from the upper end of the base to suspend the baffle arrangement within the flue. The planar base, hanger tabs and exhaust-directing fins are formed integrally from a unitary body of sheet metal.Type: GrantFiled: January 14, 2015Date of Patent: July 31, 2018Assignee: RHEEM MANUFACTURING COMPANYInventors: Qian Zhang, Jiang Yin, Gary Flatness, David Gibbons
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Patent number: 9715913Abstract: Techniques and circuitry are presented for more rapidly and accurately obtaining a temperature code (TCO) on an integrated circuit. A comparison voltage is ramped up and two counts are determined concurrently, a first count on how many clock cycles for the comparison voltage to ramp up from a low reference voltage to a proportional to absolute temperature (PTAT) and a second count for the number of clock cycles for the comparison voltage to go from the low reference voltage to a high reference voltage. The TCO value is then obtained by using the second count in a post-processing calibration to adjust the first count. An initial calibration can also be included when the circuit is powered up.Type: GrantFiled: July 30, 2015Date of Patent: July 25, 2017Assignee: SANDISK TECHNOLOGIES LLCInventors: Jiang Yin, Jongmin Park, Emilio Yero, Steve Choi
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Publication number: 20160201944Abstract: A baffle arrangement disposed within the exhaust flue of a fuel-burning water heater promotes heat transfer from exhausted combustion by-products to the water storage chamber. The baffle arrangement has an elongate planar base and plural exhaust-directing fins spaced along opposite sides of the base. Each fin is a planar body extending perpendicularly from the base at an acute upward angle from a longitudinal centerline to a respective side of the base. The fins deflect combustion by-products laterally outwardly within the flue to promote heat transfer. The fins are of selected configurations generally increasing in surface area upwardly along the planar base for selectively controlling pressure drop within the exhaust flue. Hanger tabs project outwardly from the upper end of the base to suspend the baffle arrangement within the flue. The planar base, hanger tabs and exhaust-directing fins are formed integrally from a unitary body of sheet metal.Type: ApplicationFiled: January 14, 2015Publication date: July 14, 2016Inventors: Qian Zhang, Jiang Yin, Gary Flatness, David Gibbons
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Patent number: 9122292Abstract: An LDO/HDO circuit adds a supplementary current source to supply the output node. The current boosting section includes a digital comparator with a first input connected to the LDO's feedback loop and a second input connected to a reference level. The comparator then generates a digital output used to control the supplementary current source. This approach also can be used in a far-side implementation, where the local supply level for the load is boosted by the current source based a comparison of this local level and the output of the LDO. Miller capacitive compensation is also considered. Current in shunted to ground from a node in the Miller loop, where the level is controlled by the output of a digital comparator base on a comparison of the circuit's output voltage and a reference level.Type: GrantFiled: January 25, 2013Date of Patent: September 1, 2015Assignee: SanDisk Technologies Inc.Inventors: Feng Pan, Sung-En Wang, Jiang Yin
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Patent number: 8921101Abstract: A novel and stable attenuated poliovirus, which replicates in neuroblastoma cells, is produced by engineering an indigenous replication element (cre), into the 5? non-translated genomic region and inactivating the native cre element located in the coding region of 2C (mono-crePV). The stably attenuated poliovirus replicates in a neuroblastoma model (Neuro-2aCD155 tumors) expressing CD155, the poliovirus receptor, and is effective for oncolytic treatment and cure of solid tumors, such as neuroblastoma.Type: GrantFiled: October 7, 2011Date of Patent: December 30, 2014Assignee: The Research Foundation of The State University of New YorkInventors: Eckard Wimmer, Jeronimo Cello, Aniko Paul, Hidemi Toyoda, Jiang Yin
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Publication number: 20140159682Abstract: An LDO/HDO circuit adds a supplementary current source to supply the output node. The current boosting section includes a digital comparator with a first input connected to the LDO's feedback loop and a second input connected to a reference level. The comparator then generates a digital output used to control the supplementary current source. This approach also can be used in a far-side implementation, where the local supply level for the load is boosted by the current source based a comparison of this local level and the output of the LDO. Miller capacitive compensation is also considered. Current in shunted to ground from a node in the Miller loop, where the level is controlled by the output of a digital comparator base on a comparison of the circuit's output voltage and a reference level.Type: ApplicationFiled: January 25, 2013Publication date: June 12, 2014Applicant: SanDisk Technologies Inc.Inventors: Feng Pan, Sung-En Wang, Jiang Yin
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Publication number: 20140159683Abstract: An LDO/HDO circuit adds a supplementary current source to supply the output node. The current boosting section includes a digital comparator with a first input connected to the LDO's feedback loop and a second input connected to a reference level. The comparator then generates a digital output used to control the supplementary current source. This approach also can be used in a far-side implementation, where the local supply level for the load is boosted by the current source based a comparison of this local level and the output of the LDO. Miller capacitive compensation is also considered. Current in shunted to ground from a node in the Miller loop, where the level is controlled by the output of a digital comparator base on a comparison of the circuit's output voltage and a reference level.Type: ApplicationFiled: January 25, 2013Publication date: June 12, 2014Applicant: SanDisk Technologies Inc.Inventors: Feng Pan, Sung-En Wang, Jiang Yin
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Publication number: 20120064113Abstract: A novel and stable attenuated poliovirus, which replicates in neuroblastoma cells, is produced by engineering an indigenous replication element (cre), into the 5? non-translated genomic region and inactivating the native cre element located in the coding region of 2C (mono-crePV). The stably attenuated poliovirus replicates in a neuroblastoma model (Neuro-2aCD155 tumors) expressing CD155, the poliovirus receptor, and is effective for oncolytic treatment and cure of solid tumors, such as neuroblastoma.Type: ApplicationFiled: October 7, 2011Publication date: March 15, 2012Applicant: The Research Foundation of State University of New YorkInventors: Eckard Wimmer, Jeronimo Cello, Aniko Paul, Hidemi Toyoda, Jiang Yin
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Patent number: 8066983Abstract: A novel and stable attenuated poliovirus, which replicates in neuroblastoma cells, is produced by engineering an indigenous replication element (cre), into the 5? non-translated genomic region and inactivating the native cre element located in the coding region of 2C (mono-crePV). The stably attenuated poliovirus replicates in a neuroblastoma model (Neuro-2aCD155 tumors) expressing CD155, the poliovirus receptor, and is effective for oncolytic treatment and cure of solid tumors, such as neuroblastoma.Type: GrantFiled: March 16, 2009Date of Patent: November 29, 2011Assignee: The Research Foundation of State University of New YorkInventors: Eckard Wimmer, Jeronimo Cello, Aniko Paul, Hidemi Toyoda, Jiang Yin
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Patent number: 7814868Abstract: A fuel-fired water heater has a draft inducer fan assembly with a housing having an inlet for receiving hot combustion gases discharged from the water heater, and an outlet for discharging the combustion gases. A normally closed damper member within the housing is openable by fluid pressure force created by operation of a draft inducer fan portion of the assembly. With the damper in its open position the fan exhausts the received combustion gases through a housing outlet. When the damper closes it prevents convective outflow through the housing outlet of flue-heated air. In alternate embodiments of the assembly the fan is operative to also draw in dilution air that cools the fan motor and the discharged combustion gases, with the assembly having an internal configuration preventing convective outflow of flue-heated air through the housing dilution air inlet during standby periods of the water heater.Type: GrantFiled: February 27, 2008Date of Patent: October 19, 2010Assignee: Rheem Manufacturing CompanyInventors: Jiang Yin, Jozef Boros
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Publication number: 20090246216Abstract: A novel and stable attenuated poliovirus, which replicates in neuroblastoma cells, is produced by engineering an indigenous replication element (cre), into the 5? non-translated genomic region and inactivating the native cre element located in the coding region of 2C (mono-crePV). The stably attenuated poliovirus replicates in a neuroblastoma model (Neuro-2aCD155 tumors) expressing CD155, the poliovirus receptor, and is effective for oncolytic treatment and cure of solid tumors, such as neuroblastoma.Type: ApplicationFiled: March 16, 2009Publication date: October 1, 2009Applicant: The Research Foundation of State University of New YorkInventors: Eckard Wimmer, Jeronimo Cello, Aniko Paul, Hidemi Toyoda, Jiang Yin