Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

Abstract: A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.

Abstract: The present disclosure provides a light-emitting diode chip, which includes a substrate, an epitaxial structure, an electrode metal layer, and a eutectic metal layer. The eutectic metal layer has an elongation greater than that of the electrode metal layer, and a hardness less than that of the electrode metal layer.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure disposed on the substrate, and first and second electrode units disposed on the epitaxial structure. The first and second electrode units are electrically connected to first and second semiconductor layers of the epitaxial structure, respectively. A surface of the epitaxial structure opposite to the substrate has an operating zone to be pushed by an ejector pin during a packaging process. A projection of the second electrode unit on the substrate bypasses a projection of the operating zone on the substrate, and extends toward the first electrode unit.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.