Abstract: Compounds of general Formulas (I), (IA), (IB) are described, along with compositions containing the same and methods of use thereof, inhibiting the hedgehog pathway in a cell or inhibiting unwanted proliferation of a cell.

Abstract: The present invention discloses a vehicle steering wheel, relating to the field of auto part technologies, and solving the problems of being prone to occurrent of traffic accidents and reducing traffic safety when the driver is driving in a fatigue state. In embodiments of the present disclosure, the vehicle steering wheel comprises a wheel rim, at least one oximeter is provided within handheld areas of the wheel rim and connected to a control device connected to an alarm device; and the control device is configured to judge whether or not a driver is in a fatigue driving state according to an oxyhemoglobin saturation value in the body of the driver detected by the oximeter, and to control the alarm device to operate if judging the driver is in the fatigue driving state. The present invention is mainly applied in vehicles.

Abstract: A display panel and a display device are provided. The display panel comprises a first substrate (1), a first liquid crystal display structure (2) and an organic electroluminescent structure (3); the first liquid crystal display structure (2) and the organic electroluminescent structure (3) are respectively provided at opposite sides of the first substrate (1), the organic electroluminescent structure (3) emits light from both sides; the light emitted from a side facing the first liquid crystal display structure (2) is used as the backlight for the first liquid crystal display structure (2), and the light emitted from a side facing away from the first liquid crystal display structure (2) can be used for displaying or illumination. The display panel is capable of double-sided display or illumination and has a reduced thickness.

Abstract: A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.

Abstract: The present invention provides an electronic device including a write-once-then-read-only register, a chipset, a read-only memory, a flash memory and a central processor. The write-once-then-read-only register is arranged to store a determination value. The chipset is arranged to produce a CPU reset signal. The read-only memory is implemented in the chipset, and has a first memory block which corresponds to a predetermined address and is used to store a first instruction. The flash memory is coupled to the chipset, and has a second memory block which corresponds to the predetermined address and is used to store a second instruction. The central processor is arranged to determine the location of the predetermined address according to the CPU reset signal and the determination value.

Abstract: A method for preparing a light-emitting diode having a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process, the method including: a) preparing a graphical growth substrate; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from the bottom to the top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer, and a passive metal protection layer from the bottom to the top on the GaN base light-emitting diode epitaxial layer; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer.

Abstract: Compounds of general Formulas (I), (IA), (IB) are described, along with compositions containing the same and methods of use thereof, inhibiting the hedgehog pathway in a cell or inhibiting unwanted proliferation of a cell.

Abstract: A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.

Abstract: A method for preparing a light-emitting diode having a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process, the method including: a) preparing a graphical growth substrate; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from the bottom to the top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer, and a passive metal protection layer from the bottom to the top on the GaN base light-emitting diode epitaxial layer; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer.

Abstract: The present invention provides an electronic device including a write-once-then-read-only register, a chipset, a read-only memory, a flash memory and a central processor. The write-once-then-read-only register is arranged to store a determination value. The chipset is arranged to produce a CPU reset signal. The read-only memory is implemented in the chipset, and has a first memory block which corresponds to a predetermined address and is used to store a first instruction. The flash memory is coupled to the chipset, and has a second memory block which corresponds to the predetermined address and is used to store a second instruction. The central processor is arranged to determine the location of the predetermined address according to the CPU reset signal and the determination value.

Abstract: The present invention relates, in general, to the Smoothened receptor and, in particular, to a method of modulating Smoothened receptor activity and to compounds and compositions suitable for use in such a method.

Abstract: The present invention discloses novel methods for screening compositions for both agonist and antagonist activity on the smoothened receptor. The assay tests ligands on the activity of the receptor using a cyclopamine binding and ultra high receptor expression.

Abstract: A computer system and a booting method thereof are disclosed. The computer system contains a storage device for storing a booting system and a multi-tasking kernel; and a microprocessor coupled to the storage device for loading the multi-tasking kernel to execute the booting system.

Abstract: A method and a computer system for installing a driver are disclosed. The method includes: storing a system kernel, a driver and address data into a first storage unit, wherein the address data defines that the driver is predetermined to be stored in a predetermined storage space of a second storage unit; storing the system kernel stored in the first storage unit into the system kernel storage space; and executing the system kernel to read the driver from the predetermined storage space according to the address data for installing the driver.

Abstract: A computer system and a booting method thereof are disclosed. The computer system contains a storage device for storing a booting system and a multi-tasking kernel; and a microprocessor coupled to the storage device for loading the multi-tasking kernel to execute the booting system.