Abstract: The invention is directed to a method for cleaning surfaces of optical elements made from metal fluoride single crystals of formula MF2, where M is calcium, barium, magnesium, or strontium, or mixtures of the foregoing, prior to coating the elements with films of protective materials; and to a DUV optic made using the foregoing method. The method has at least the steps of: (a) immersing the optical element in at least one selected liquid and utilizing sonication at megasonic frequencies to remove particulates, polishing slurry residue and the damaged top layer of the optical element; (b) cleaning in a gas phase cleaning process whereby hydrocarbons are removed from the surface of the optical element using UV/ozone cleaning; and (c) exposing, in a gas phase process, of the optical element's surface to a low-energy plasma containing argon and oxygen, xenon and oxygen, or fluorine in a vacuum environment.

Abstract: A glass article having at least one edge of which at least a portion has been laser melted. The laser melted portion scatters light, thus enabling the glass article to be properly aligned. In some embodiments, the laser melted portion also provides a roughened edge having a coefficient of friction that facilitates handling of the glass article. The laser melted portion is formed by irradiating the peripheral surface with a laser beam to cause localized melting.

Abstract: A glass article having an edge of which at least a portion that is ground and subsequently etched to provide a roughened edge. The roughened edge scatters light, thus enabling the glass article to be properly aligned. In some embodiments, the roughened edge also provides a surface having a coefficient of friction that facilitates handling of the glass article. The edge may further include at least one chamfer that may either be polished, so as to be transparent or ground and subsequently etched.

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.