Abstract: A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

Abstract: In one embodiment, a method includes attaching a film to cover a first portion of a first semiconductor die. The first semiconductor die is attached, using the tape, to a lead frame using a first bonding method. The first bonding method places the film between the lead frame and the semiconductor die. A second semiconductor die is attached to the lead frame using a second bonding method. The second bonding method bonds the lead frame and the semiconductor die. The first semiconductor device and the second semiconductor device are encapsulated into a semiconductor package.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: In one embodiment, a method for manufacturing a power semiconductor package is provided. The method includes attaching a plurality of solders balls onto a power semiconductor device. The plurality of solder balls are attached onto a lead frame using a flip bond processing step. The flip bond processing step bonds the semiconductor device to the lead frame and interconnects the lead frame to the semiconductor device in a single processing step. The semiconductor device, plurality of solder balls, and the lead frame are molded to form the power semiconductor package, wherein semiconductor device is exposed on a first side of the semiconductor package.

Abstract: In one embodiment, a method includes attaching a film to cover a first portion of a first semiconductor die. The first semiconductor die is attached, using the tape, to a lead frame using a first bonding method. The first bonding method places the film between the lead frame and the semiconductor die. A second semiconductor die is attached to the lead frame using a second bonding method. The second bonding method bonds the lead frame and the semiconductor die. The first semiconductor device and the second semiconductor device are encapsulated into a semiconductor package.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

Abstract: A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.