Abstract: A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

Abstract: The present invention discloses a vertical SOI bipolar junction transistor and a manufacturing method thereof. The bipolar junction transistor includes an SOI substrate from down to up including a body region, a buried oxide layer and a top silicon film; an active region located in the top silicon film formed by STI process; a collector region located in the active region deep close to the buried oxide layer formed by ion implantation; a base region located in the active region deep close to the top silicon film formed by ion implantation; an emitter and a base electrode both located over the base region; a side-wall spacer located around the emitter and the base electrode. The present invention utilizing a simple double poly silicon technology not only can improve the performance of the transistor, but also can reduce the area of the active region in order to increase the integration density.

Abstract: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

Abstract: Provided are a method, system, and article of manufacture for encrypting and decrypting database records. Encryption metadata is provided for a database file having fields, wherein the encryption metadata indicates at least one encryption key for the file. A request is received to perform a read or write operation with respect to a record including the fields for the database file. A determination is made from the encryption metadata of the at least one encryption key for the database file. The determined encryption key is used to encrypt or decrypt for the read or write operation with respect to at least one of the fields in the database file.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin.

Abstract: A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

Abstract: Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

Abstract: The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

Abstract: A bottle opener including a housing with a inner cavity; a pair of clamping handles having upper portions coupled to the lower portions of the housing, and the lower portions including clamping portions configured to mate with the neck of the bottle. Also included are an actuator; a first sliding block making reciprocating movement in a longitudinal axis direction with respect to the inner cavity of the housing by the actuator; a helical screw assembly having an upper portion mounted in the first sliding block by a bearing and a lower portion that is free with rotation related to the first sliding block; and a second sliding block contained only slidably in the inner cavity of housing and positioned between the bottom plane of the inner cavity and the lower surface of the first sliding block.

Abstract: Provided are a method, system, and article of manufacture for encrypting and decrypting database records. Encryption metadata is provided for a database file having fields, wherein the encryption metadata indicates at least one encryption key for the file. A request is received to perform a read or write operation with respect to a record including the fields for the database file. A determination is made from the encryption metadata of the at least one encryption key for the database file. The determined encryption key is used to encrypt or decrypt for the read or write operation with respect to at least one of the fields in the database file.

Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract: A bottle opener comprises a housing with a inner cavity therethrough; a pair of clamping handles whose upper portion are coupled to the lower portion of the housing and lower portion comprise clamping portions configured to mated with the neck of the bottle; an actuator; a first sliding block making reciprocating movement in longitudinal axis direction with respect to the inner cavity of the housing by the actuator; a helical screw assembly whose upper portion is mounted in the first sliding block by a bearing means and lower portion is free with rotation related to the first sliding block; a second sliding block contained only slidably in the inner cavity of housing and positioned between the bottom plane of the inner cavity and the lower surface of the first sliding block, having a screw passage through which screw can't pass unless it rotates; a latch means selectively latching or releasing the second sliding block with respect to the inner cavity in the longitudinal axis direction; a clutch means selectiv

Abstract: We have identified a novel protein, named ALARM or &dgr;-catenin, on the basis of its ability to bind to presenilin 1. ALARM contains 4 copies of the arm repeat and is expressed almost exclusively in brain tissue.

Abstract: We have identified a novel protein, named ALARM or &dgr;-catenin, on the basis of its ability to bind to presenilin 1. ALARM contains 4 copies of the arm repeat and is expressed almost exclusively in brain tissue.

Abstract: A method and system for generating an effective road profile for use with a computer aided vehicle design system is disclosed. The method has the steps of developing a vehicle model for a vehicle is developed and then excited with an initial drive file to produce a vehicle model response. The vehicle model response is compared to a desired response to produce an error signal, the desired response being based on vehicle dynamics data from a vehicle when driven over a road surface. A modified error signal is determined using a vehicle response model, and the modified error signal is fed into the vehicle model to produce a vehicle model response. A new error signal is iteratively determined until it is within a predetermined limit to produce a vehicle model effective road profile. Once the effective road profile has been determined, a modified vehicle model is excited with the effective road profile to produce a modified model response. The modified vehicle can thus be tested without need for a prototype.