Abstract: The disclosure describes various aspects of a metal organic chemical vapor deposition (MOCVD) effluent abatement process. In an aspect, a system for removing toxic waste from an exhaust stream includes a first cold trap that operates at a first pressure and condenses toxic materials in the exhaust stream for removal as solid waste; a pump connected to the first cold trap that increases a pressure of the exhaust stream; a hot cracker connected to the pump that decomposes toxic materials remaining in the exhaust stream after the first cold trap; a second cold trap connected to the hot cracker that operates at a second pressure higher than the first pressure and condenses the decomposed toxic materials remaining in the exhaust stream for removal as solid waste; and a scrubber connected to the second cold trap that absorbs toxic materials remaining in the exhaust stream after the second cold trap.

Abstract: Provided are a waste gas processing device, a vacuum coating system, and an operation method of a waste gas processing device. The waste gas processing device is configured to remove and recover arsenic in waste gas, and includes a condensation portion and a scraping portion. The condensation portion is provided with a condensation cavity, and an air inlet, an air outlet and a discharge port communicated with the condensation cavity. The condensation portion is configured to cool waste gas charged into the condensation cavity from the air inlet, so that gaseous arsenic in the waste gas is condensed on an inner wall surface of the condensation cavity by cooling to form solid arsenic. The scraping portion is rotatably provided in the condensation cavity, and a partial surface of the scraping portion abuts against the inner wall surface of the condensation cavity.

Abstract: The present disclosure provides a heating assembly arranged below a carrier plate, including a first heating unit and a second heating unit arranged up and down; wherein the first heating unit includes a plurality of first heating elements arranged in parallel, the second heating unit includes a plurality of second heating elements arranged in parallel; the arrangement direction of the first heating elements is perpendicular to the arrangement direction of the second heating elements, and the projections of the first heating elements and the second heating elements on a heating surface of the carrier plate constitute several annular heating zones. The heating assembly is simple in structure and rational in design. The heating surface of the carrier plate is divided into a plurality of annular zones, which effectively improves the uniformity of heating temperature distribution and process results.

Abstract: Embodiments of the present disclosure relate to a technical field of vacuum gauges, and more particularly to a vacuum measuring device. The vacuum measuring device includes a pre-stage chamber and a vacuum gauge provided in sequence along a pressure conduction direction. The pre-stage chamber is communicated with the vacuum gauge. A pre-stage diaphragm is provided in the pre-stage chamber. A measurement diaphragm is provided in the vacuum gauge. A pressure conduction chamber is formed between the pre-stage diaphragm and the measurement diaphragm. The pressure conduction chamber is filled with a pressure conduction fluid.

Abstract: The present disclosure relates to the technical field of semiconductors, and more particularly to a mass flow controller. The mass flow controller includes an inlet pipeline, an outlet pipeline and a control component. There are multiple inlet pipelines and/or outlet pipelines. One end of each inlet pipeline is an air inlet, and the other end of each inlet pipeline is communicated with each outlet pipeline. Each inlet pipeline is provided with a potential monitoring element. The control component is connected to each potential monitoring element, and the control component controls the gas flow of each inlet pipeline and each outlet pipeline.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the to external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.