Patents by Inventor Jian Hui Zhao

Jian Hui Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double-gated vertical junction field effect power transistor
    Patent number: 6841812
    Abstract: The present invention is a power semiconductor switch having a monolithically integrated low-voltage lateral junction field effect transistor (LJFET) controlling a high-voltage vertical junction field effect transistor (VJFET). The low-voltage LJFET conducting channel is double-gated by p+n junctions at opposite sides of the lateral channel. A buried p-type epitaxial layer forms one of the two p+n junction gates. A p+ region created by ion implantation serves as the p+ region for the second p+n junction gate. Both gates are electrically connected by a p+ tub implantation. The vertical channel of the vertical JFET is formed by converting part of the buried p-type epitaxial layer into n+ channel via n-type ion implantation.
    Type: Grant
    Filed: November 7, 2002
    Date of Patent: January 11, 2005
    Assignee: United Silicon Carbide, Inc.
    Inventor: Jian Hui Zhao
  • Double-gated vertical junction field effect power transistor
    Publication number: 20030089930
    Abstract: The present invention is a power semiconductor switch having a monolithically integrated low-voltage lateral junction field effect transistor (LJFET) controlling a high-voltage vertical junction field effect transistor (VJFET). The low-voltage LJFET conducting channel is double-gated by p+n junctions at opposite sides of the lateral channel. A buried p-type epitaxial layer forms one of the two p+n junction gates. A p+ region created by ion implantation serves as the p+ region for the second p+n junction gate. Both gates are electrically connected by a p+ tub implantation. The vertical channel of the vertical JFET is formed by converting part of the buried p-type epitaxial layer into n+ channel via n-type ion implantation.
    Type: Application
    Filed: November 7, 2002
    Publication date: May 15, 2003
    Inventor: Jian Hui Zhao