Abstract: Embodiments of the present disclosure relate to the field of solar cell technologies, and provide a solar cell, a method for preparing the same, and a photovoltaic module. The solar cell includes an N-type silicon substrate including a front surface and a rear surface opposite to the front surface. The front surface includes a plurality of pyramid structures, the rear surface includes a plurality of grooves, and some of the plurality of grooves are sequentially arranged along one arrangement direction. The solar cell includes a passivation layer formed over the front surface, a tunneling dielectric layer formed over the rear surface, and a doped conductive layer formed over the tunneling dielectric layer. Embodiments of the present disclosure at least help improve the photoelectric conversion efficiency of the solar cell by changing a morphology of the rear surface of the N-type silicon substrate.

Abstract: Embodiments of the present disclosure relate to the field of solar cell technologies, and provide a solar cell, a method for preparing the same, and a photovoltaic module. The solar cell includes an N-type silicon substrate including a front surface and a rear surface opposite to the front surface. The front surface includes a plurality of pyramid structures, the rear surface includes a plurality of grooves, and some of the plurality of grooves are sequentially arranged along one arrangement direction. The solar cell includes a passivation layer formed over the front surface, a tunneling dielectric layer formed over the rear surface, and a doped conductive layer formed over the tunneling dielectric layer. Embodiments of the present disclosure at least help improve the photoelectric conversion efficiency of the solar cell by changing a morphology of the rear surface of the N-type silicon substrate.

Abstract: The invention discloses a preparation method of a carbon nitride (CN) electrode material. The preparation method comprises the following steps: (1) preparing a precursor film: immersing a clean conductive substrate A into a hot saturated CN precursor aqueous solution, then immediately taking out, after the surface being dried, a uniform precursor film layer on the conductive substrate A was formed. This step can be repeated several times to get different layers of precursor film on the substrate A; (2) preparing the CN electrode: the dry precursor film obtained in step (1) was encapsulated in a glass tube filled with N2. Then the glass tube was inserted into a furnace with N2 atmosphere to calcinate. After calcination, the uniform CN film electrode was obtained. The method provided by the invention is simple and easy to implement, and convenient in used equipment, suitable for industrial application and popularization.

Abstract: The invention discloses a preparation method of a carbon nitride (CN) electrode material. The preparation method comprises the following steps: (1) preparing a precursor film: immersing a clean conductive substrate A into a hot saturated CN precursor aqueous solution, then immediately taking out, after the surface being dried, a uniform precursor film layer on the conductive substrate A was formed. This step can be repeated several times to get different layers of precursor film on the substrate A; (2) preparing the CN electrode: the dry precursor film obtained in step (1) was encapsulated in a glass tube filled with N2. Then the glass tube was inserted into a furnace with N2 atmosphere to calcinate. After calcination, the uniform CN film electrode was obtained. The method provided by the invention is simple and easy to implement, and convenient in used equipment, suitable for industrial application and popularization.