Abstract: A method for read reference voltage calibration of a non-volatile memory, NVM, such as flash memory, particularly of the NAND type, comprises: Reading from the NVM predetermined reference data stored therein and being encoded with an error correction code, ECC, wherein the reading is performed when a read reference voltage of the NVM, which is used as a reference voltage, such as a threshold voltage, for the reading, is set at a defined voltage level; decoding the read data and observing a number of bit errors, e.g., in a codeword, of the read data in relation to the reference data; and defining a new voltage level of the read reference voltage for a subsequent reading of data from the NVM based on the observed number of bit errors and setting the read reference voltage to the defined new voltage level.

Abstract: A droplet generator apparatus and droplet generation method based on high aspect ratio induced droplet self-breakup are provided. The droplet generator apparatus includes a channel (1) and a nozzle (2) connected to the channel(1), and the aspect ratio of the channel (1) can be 3.0 or greater. The apparatus may further include a blocking rail (10) that is positioned in front of the nozzle (2), a supplying rail(9) that is positioned in front of the nozzle (2), and a supplying trench (8) formed in a space between the nozzle (2) and the supplying rail (9).

Abstract: A droplet generator apparatus and droplet generation method based on high aspect ratio induced droplet self-breakup are provided. The droplet generator apparatus includes a channel (1) and a nozzle (2) connected to the channel(1), and the aspect ratio of the channel (1) can be 3.0 or greater. The apparatus may further include a blocking rail (10) that is positioned in front of the nozzle (2), a supplying rail(9) that is positioned in front of the nozzle (2), and a supplying trench (8) formed in a space between the nozzle (2) and the supplying rail (9).