Abstract: A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.

Abstract: The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged P+ field region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.

Abstract: A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.

Abstract: A process for forming a power MOSFET enables the connection a metal gate electrode to the conductive polysilicon gates in the active area without an additional mask step. In the process, a groove is formed in the field oxide during the active area mask step. Conductive polysilicon is then formed over the active area and into the groove. At least one window is formed over the groove along with the mask window for forming the channel and source implant windows, and the polysilicon is etched to the silicon surface in the active area, but a strip is left in the groove. This strip is contacted by gate metal during metal deposition. Thus, gate metal is connected to the polysilicon without an added mask step.

Abstract: A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.

Abstract: A power semiconductor device of the trench variety in which the trenches follow a serpentine path.

Abstract: A system and method for creating a controlling device. In response to a user specifying one or more operating criteria for the controlling device, the system selects executable instructions from a library of executable instructions and command code sets from a library of command code sets that are to be stored in the memory of the controlling device. In addition, the system uses the criteria to suggest command key/command code mappings for use within the controlling device. The user may interact with the system to modify the selected executable instructions, command code sets, and command key/command code mappings. When stored in the memory of the controlling device, the executable instructions are to be used to perform various operations and functions within the controlling device and the command codes are to be transmitted from the controlling device to command the operation of controllable devices in response to activation of one or more of the command keys.

Abstract: A process for forming a superjunction device that includes a series of implants to form closely spaced implant regions which are linked together by a short thermal step, whereby deep and narrow regions can be formed within a semiconductor body.

Abstract: A system and method for creating a controlling device. In response to a user specifying one or more operating criteria for the controlling device, the system selects executable instructions from a library of executable instructions and command code sets from a library of command code sets that are to be stored in the memory of the controlling device. In addition, the system uses the criteria to suggest command key/command code mappings for use within the controlling device. The user may interact with the system to modify the selected executable instructions, command code sets, and command key/command code mappings. When stored in the memory of the controlling device, the executable instructions are to be used to perform various operations and functions within the controlling device and the command codes are to be transmitted from the controlling device to command the operation of controllable devices in response to activation of one or more of the command keys.

Abstract: A vertical conduction MOSFET having a reduced on resistance RDSON as well as reduced threshold voltage Vth, and an improved resistance to punchthrough and walkout has an extremely shallow source diffusion, of less than 0.3 microns in depth and an extremely shallow channel diffusion, of less than about 3 microns in depth. In a P channel version, phosphorus is implanted into the bottom of a contact trench and into the channel region with an implant energy of 400 keV for a singly charged phosphorus ion or 200 keV for a doubly charged ion, thereby to prevent walkout of the threshold voltage.

Abstract: A power semiconductor switching device such as a power MOSFET that includes breakdown voltage enhancement regions formed by self-alignment.

Abstract: A system and method for creating a controlling device. In response to a user specifying one or more operating criteria for the controlling device, the system selects executable instructions from a library of executable instructions and command code sets from a library of command code sets that are to be stored in the memory of the controlling device. In addition, the system uses the criteria to suggest command key/command code mappings for use within the controlling device. The user may interact with the system to modify the selected executable instructions, command code sets, and command key/command code mappings. When stored in the memory of the controlling device, the executable instructions are to be used to perform various operations and functions within the controlling device and the command codes are to be transmitted from the controlling device to command the operation of controllable devices in response to activation of one or more of the command keys.

Abstract: A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.

Abstract: A system and method for creating a controlling device. In response to a user specifying one or more operating criteria for the controlling device, the system selects executable instructions from a library of executable instructions and command code sets from a library of command code sets that are to be stored in the memory of the controlling device. In addition, the system uses the criteria to suggest command key/command code mappings for use within the controlling device. The user may interact with the system to modify the selected executable instructions, command code sets, and command key/command code mappings. When stored in the memory of the controlling device, the executable instructions are to be used to perform various operations and functions within the controlling device and the command codes are to be transmitted from the controlling device to command the operation of controllable devices in response to activation of one or more of the command keys.

Abstract: A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.

Abstract: A power semiconductor device formed of a substrate of a first conductivity type, an epitaxial layer of a first conductivity type formed on a surface of the substrate, a plurality of lightly doped spaced base regions of a second conductivity type formed to a first predetermined depth in the epitaxial layer with common conduction regions between the base regions, a plurality of highly doped source regions of the first conductivity type formed in the lightly doped base regions, invertible channel regions disposed between the source regions and the common conduction regions, deep implanted junctions of the second conductivity type formed in the epitaxial layer under the base regions extending between the first predetermined depth and a second predetermined depth, gate electrodes insulated from the invertible channels by an insulation layer formed over the invertible channels, and thick insulation spacers disposed over at least a portion of the common conduction regions.

Abstract: A system and method for creating a controlling device. In response to a user specifying one or more operating criteria for the controlling device, the system selects executable instructions from a library of executable instructions and command code sets from a library of command code sets that are to be stored in the memory of the controlling device. In addition, the system uses the criteria to suggest command key/command code mappings for use within the controlling device. The user may interact with the system to modify the selected executable instructions, command code sets, and command key/command code mappings. When stored in the memory of the controlling device, the executable instructions are to be used to perform various operations and functions within the controlling device and the command codes are to be transmitted from the controlling device to command the operation of controllable devices in response to activation of one or more of the command keys.

Abstract: A vertical conduction MOSFET having a reduced on resistance RDSON as well as reduced threshold voltage Vth, and an improved resistance to punchthrough and walkout has an extremely shallow source diffusion, of less than 0.3 microns in depth and an extremely shallow channel diffusion, of less than about 3 microns in depth. In a P channel version, phosphorus is implanted into the bottom of a contact trench and into the channel region with an implant energy of 400 keV for a singly charged phosphorus ion or 200 keV for a doubly charged ion, thereby to prevent walkout of the threshold voltage.

Abstract: Guard ring diffusions in the termination of a MOSgated device are laterally spaced from one another and are disposed beneath and are insulated from the termination field plate which extends from the periphery of the device active area.

Abstract: A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.