Patents by Inventor Jianmin Feng

Jianmin Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
    Patent number: 8962476
    Abstract: A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: February 24, 2015
    Assignee: STATS ChipPAC, Ltd.
    Inventors: Yaojian Lin, Xia Feng, Jianmin Feng, Kang Chen
  • Semiconductor Device and Method of Forming RDL Wider than Contact Pad Along First Axis and Narrower than Contact Pad along Second Axis
    Publication number: 20130249111
    Abstract: A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
    Type: Application
    Filed: May 14, 2013
    Publication date: September 26, 2013
    Applicant: STATS ChipPAC, Ltd.
    Inventors: Yaojian Lin, Xia Feng, Jianmin Feng, Kang Chen