Abstract: Provided is an airflow control method for an air flotation cyclone operation of a low-pressure heat treatment device, comprising: arranging a pressure sensor in a process chamber of the low-pressure heat treatment device, and controlling a pressure of process gas in the process chamber to be 1 to 20 Torrs; controlling a flow rate of cyclone gas delivered toward a bottom surface of a tray of the low-pressure heat treatment device to be 0.5 to 1.5 L/min by flow control, and controlling accuracy to be within ±0.2 L/min; and adjusting the flow rate of the cyclone gas so that the tray and a semiconductor workpiece placed on an upper surface of the tray rotate together.

Abstract: Provided is a temperature control method for semiconductor process, comprising: setting a first measurement point of a first point distribution in a first process device to measure a temperature in the first process device; and setting a second measurement point of a second point distribution in a second detection device to measure a target parameter; wherein the first point distribution comprises a concentric circle-shaped dot matrix with unequal radial spacings; and the second point distribution has a concentric circle-shaped dot matrix corresponding to the first point distribution.

Abstract: Provided is a gas distribution element and a heat treatment device containing the gas distribution element. The gas distribution element comprises at least two regions with different hole distribution densities. Specifically, the gas distribution element comprises a first region defined by a first distance radially extending outward from a geometric center, and a second region defined by a second distance radially extending from an outermost edge toward the geometric center; and the first region and the second region respectively have holes with different distribution densities.

Abstract: Provided is a low-pressure oxidation treatment method and device for a semiconductor workpiece. The low-pressure oxidation treatment method includes: pumping a reaction chamber such that the reaction chamber has a pressure lower than 760 Torr; introducing a process gas including hydrogen and oxygen to the reaction chamber; increasing a temperature within the reaction chamber to cause the process gas to generate oxygen radicals; and exposing the semiconductor workpiece to the oxygen radicals to form an oxide film on a surface of the semiconductor workpiece.

Abstract: A heat treatment apparatus is provided, which includes: a reaction chamber defined by an upper cover plate, a lower cover plate and a reaction chamber body; an infrared emitter located at an end of the upper cover plate; an infrared reflection sensor located at another end of the upper cover plate, and an infrared transmission sensor located at another end of the lower cover plate. The infrared emitter and the infrared reflection sensor are located at a side of the upper cover plate facing to the reaction chamber, the infrared transmission sensor is located at a side of the lower cover plate facing to the reaction chamber, the infrared emitter is located on a sidewall of an end of the reaction chamber body, and the infrared reflection sensor and the infrared transmission sensor are located on a sidewall of another end of the reaction chamber body.

Abstract: A heat treatment apparatus is provided, which includes: a first cover plate including three or more first windows; a second cover plate including two or more second windows, the second windows are transmissive to radiation with a wavelength of 2.7 ?m; a workpiece support element between the first cover plate and the second cover plate, configured to support the semiconductor workpiece; a temperature measurement component comprising an infrared emitter, at least two infrared reflection sensors that are successive and at least two infrared transmission sensors, where the three or more first windows comprise a first window at a first position, a first window at least one middle position and a first window at a final position in a horizontal direction away from the infrared emitter, and a surface facing to the second cover plate of the first window at the middle position has a reflection transmission coating layer.

Abstract: Provided is a reaction chamber and an oxidation device. The reaction chamber includes a chamber body and a flow guide tube. The chamber body is provided with a wafer stage inside, the wafer stage forms a reaction area for accommodating a wafer, a top surface of the reaction area is not lower than a top surface of the wafer, and a side wall of the chamber body is provided with an opening. The flow guide tube is arranged inside the chamber body, the flow guide tube comprises a tube body, a gas inlet of the tube body is communicated with the opening, and a gas outlet of the tube body extends toward the reaction area and is used to transport the plasma to the top surface of the reaction area.

Abstract: A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.

Abstract: A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.

Abstract: A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.