Abstract: Provided is a bulk acoustic wave resonator. The bulk acoustic wave resonator includes a first electrode, a piezoelectric layer and a second electrode, where the piezoelectric layer is disposed between the first electrode and the second electrode, the piezoelectric layer is provided with at least one slit, and along a direction pointing from the first electrode to the second electrode, the at least one slit penetrates through at least the piezoelectric layer.

Abstract: Provided is a bulk acoustic wave resonator. The bulk acoustic wave resonator includes an upper electrode, a piezoelectric layer and a lower electrode. The piezoelectric layer is disposed between the upper electrode and the lower electrode. At least one boundary of an orthogonal projection of the piezoelectric layer on the lower electrode includes a plurality of sawtooth structures.

Abstract: A chemical sensor for heavy metal detection is provided. The chemical sensor includes an inlet, a chamber in fluid communication with the inlet, and an outlet in fluid communication with the chamber. A working electrode is provided in the chamber. The working electrode includes a plurality of protrusions extending into a fluid flow path in the chamber beyond a boundary layer of the fluid flow path. The chemical sensor also includes a reference electrode, a counter electrode, and a plurality of contact pads electrically connected to respective ones of the working electrode, the reference electrode and the counter electrode.

Abstract: A chemical sensor for heavy metal detection is provided. The chemical sensor includes an inlet, a chamber in fluid communication with the inlet, and an outlet in fluid communication with the chamber. A working electrode is provided in the chamber. The working electrode includes a plurality of protrusions extending into a fluid flow path in the chamber beyond a boundary layer of the fluid flow path. The chemical sensor also includes a reference electrode, a counter electrode, and a plurality of contact pads electrically connected to respective ones of the working electrode, the reference electrode and the counter electrode.

Abstract: According to embodiments of the present invention, a sensor for determining a flow parameter of a fluid is provided. The sensor includes a polymer membrane, an elongate microstructure extending from the polymer membrane, and a hydrogel coupled to at least a portion of the elongate microstructure, wherein the hydrogel and the elongate microstructure are arranged to cooperate to cause a displacement of the polymer membrane in response to a fluid flowing and interacting with the sensor, and wherein the sensor is configured to provide a measurement indicative of a flow parameter of the fluid based on the displacement of the polymer membrane. According to further embodiments of the present invention, a method for forming a sensor and a method of controlling a sensor are also provided.

Abstract: This invention relates to the field of silicon microphone technology, more specifically, to a method for fabricating a MEMS microphone using multi-cavity SOT wafer by Si—Si fusion bonding technology, which comprises a multi-cavity silicon backplate and a monocrystalline silicon diaphragm, both are separated with a layer of silicon dioxide to form the capacitor of the MEMS microphone. The monocrystalline silicon diaphragm has advantages such as low residual stress and good uniformity, which increase the yield and sensitivity of MEMS silicon microphone; the diaphragm comprises tiny release-assistant holes, spring structures with anchors and bumps which can quickly release the residual stress and reduce the probability of stiction between the backplate and the silicon diaphragm. This structure will further improve yield and reliability of MEMS microphone.

Abstract: This invention relates to the field of silicon microphone technology, more specifically, to a method for fabricating a MEMS microphone using multi-cavity SOT wafer by Si-Si fusion bonding technology, which comprises a multi-cavity silicon backplate and a monocrystalline silicon diaphragm, both are separated with a layer of silicon dioxide to form the capacitor of the MEMS microphone. The monocrystalline silicon diaphragm has advantages such as low residual stress and good uniformity, which increase the yield and sensitivity of MEMS silicon microphone; the diaphragm comprises tiny release-assistant holes, spring structures with anchors and bumps which can quickly release the residual stress and reduce the probability of stiction between the backplate and the silicon diaphragm. This structure will further improve yield and reliability of MEMS microphone.

Abstract: According to embodiments of the present invention, a sensor for determining a flow parameter of a fluid is provided. The sensor includes a polymer membrane, an elongate microstructure extending from the polymer membrane, and a hydrogel coupled to at least a portion of the elongate microstructure, wherein the hydrogel and the elongate microstructure are arranged to cooperate to cause a displacement of the polymer membrane in response to a fluid flowing and interacting with the sensor, and wherein the sensor is configured to provide a measurement indicative of a flow parameter of the fluid based on the displacement of the polymer membrane. According to further embodiments of the present invention, a method for forming a sensor and a method of controlling a sensor are also provided.

Abstract: An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via.

Abstract: A method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate, said through-hole via having an effective aspect ratio, said method including supplying an initial pulse current cycle to the via, said pulse current cycle including a forward pulse current, and a reverse pulse current, wherein the forward pulse current and the reverse pulse current are each of a predetermined distinct magnitude and are each supplied over a predetermined distinct period, wherein the magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current, such that a corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of said via; and supplying at least one subsequent pulse current cycle wherein the magnitude of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced

Abstract: A micro-rotating device has a rotor 200 (of diameter not more than 1.5 cm), a shaft 202 threaded through the rotor 200, and a shaft holder 207 for holding the shaft. The shaft holders are formed by etching an Si substrate 501 to form multiple shaft receiving openings 508. The rotors and shafts too are formed from respective Si substrates 301, 401. The rotors 200 are located over the shaft holders 207, and the shafts threaded through the rotors 200 into the openings 509 and attached there by a wafer bonding process. Then the substrate 501 is partitioned to give individual motor elements. Protrusions 206 extend from the rotor in the direction towards the stator to space the rotor from the shaft holder.

Abstract: A micro-rotating device has a rotor 200 (of diameter not more than 1.5 cm), a shaft 202 threaded through the rotor 200, and a shaft holder 207 for holding the shaft. The shaft holders are formed by etching an Si substrate 501 to form multiple shaft receiving openings 508. The rotors and shafts too are formed from respective Si substrates 301, 401. The rotors 200 are located over the shaft holders 207, and the shafts threaded through the rotors 200 into the openings 509 and attached there by a wafer bonding process. Then the substrate 501 is partitioned to give individual motor elements. Protrusions 206 extend from the rotor in the direction towards the stator to space the rotor from the shaft holder.