Abstract: This application relates to an overload and unbalanced load detecting system for a railway and a detecting method. This system includes at least one steel rail. A rail web of each steel rail is provided with two sampling points at two sides between every two adjacent rail sleepers, respectively, and the two sampling points on one side are symmetrically disposed about the steel rail with respect to the two sampling points on the other side. A fiber-optic sensitive element used for continuously measuring a load when a train passes through the two sampling points is obliquely fixed at each sampling point, and two fiber-optic sensitive elements on the same side of each steel rail are disposed at an angle of 90° with each other.

Abstract: One embodiment can provide an intelligent robotic system. The intelligent robotic system can include at least one multi-axis robotic arm, at least one gripper attached to the multi-axis robotic arm for picking up a component, a machine vision system comprising at least a three-dimensional (3D) surfacing-imaging module for detecting 3D pose information associated with the component, and a control module configured to control movements of the multi-axis robotic arm and the gripper based on the detected 3D pose of the component.

Abstract: This application relates to an overload and unbalanced load detecting system for a railway and a detecting method. This system includes at least one steel rail. A rail web of each steel rail is provided with two sampling points at two sides between every two adjacent rail sleepers, respectively, and the two sampling points on one side are symmetrically disposed about the steel rail with respect to the two sampling points on the other side. A fiber-optic sensitive element used for continuously measuring a load when a train passes through the two sampling points is obliquely fixed at each sampling point, and two fiber-optic sensitive elements on the same side of each steel rail are disposed at an angle of 90° with each other.

Abstract: One embodiment can provide an intelligent robotic system. The intelligent robotic system can include at least one multi-axis robotic arm, at least one gripper attached to the multi-axis robotic arm for picking up a component, a machine vision system comprising at least a three-dimensional (3D) surfacing-imaging module for detecting 3D pose information associated with the component, and a control module configured to control movements of the multi-axis robotic arm and the gripper based on the detected 3D pose of the component.

Abstract: A wafer carrier for carrying solar cell wafers during a deposition process is described. The carrier is coated with pyrolytic carbon, silicon carbide, or a ceramic material, and is adapted to receive and support the wafers.

Abstract: One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first passivation layer on a first side of a Si base layer of the photovoltaic structure using a static chemical vapor deposition process. The static chemical vapor deposition process can be performed inside a first reaction chamber. The system can then transfer the photovoltaic structure from the first reaction chamber to a second reaction chamber without the photovoltaic structure leaving a common vacuum space comprising both reaction chambers, and deposit a second passivation layer on the first passivation layer using an inline chemical vapor deposition process. The inline chemical vapor deposition process can be performed inside the second reaction chamber.

Abstract: A system for fabricating a solar string is provided. The system obtains multiple photovoltaic structures. A photovoltaic structure comprises first and second metallic grids on first and second surfaces. The system applies, over the first and second grids, an organic coating, which covers a top surface of a first edge busbar of the first metallic grid and a top surface of a second edge busbar of the second metallic grid. The system removes portions of the organic coating to expose a portion of the top surface of the first edge busbar and a corresponding portion of the top surface of the second edge busbar, deposits conductive paste on the first edge busbar at locations where the organic coating is removed, and cascades the plurality of photovoltaic structures into a string by overlapping the first edge busbar of the photovoltaic structure with the second edge busbar of an adjacent photovoltaic structure.

Abstract: One embodiment of the present invention provides a photovoltaic module. The photovoltaic module includes an optical concentrator and a tunneling-junction solar cell. The tunneling-junction solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated above the base layer, an emitter layer, a front-side electrode, and a back-side electrode.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.

Abstract: One embodiment of the present invention provides a solar cell panel that includes a front-side cover, a back-side cover, a number of solar cells situated between the front-side cover and the back-side cover, and a number of maximum power point tracking (MPPT) devices situated between the front-side cover and the back-side cover.

Abstract: One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.

Abstract: A method of fabricating a solar cell is described. The solar cell can include a photovoltaic structure and a metallic grid on the photovoltaic structure. The metallic grid can include one or more electroplated metal layers, a busbar, and a plurality of finger lines connected to the busbar, where one or more finger lines have variable widths.

Abstract: One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

Abstract: One embodiment provides an electroplating apparatus, which includes a tank filled with an electrolyte solution, a number of anodes situated around edges of the tank, a cathode situated above the tank, and a plurality of wafer-holding jigs attached to the cathode. A respective wafer-holding jig includes a common connector electrically coupled to the cathode and a pair of wafer-mounting frames electrically coupled to the common connector. Each wafer-mounting frame includes a plurality of openings, and a respective opening provides a mounting space for a to-be-plated solar cell, thereby facilitating simultaneous plating of front and back surfaces of the plurality of the solar cells.