Abstract: The present invention discloses compounds of Formula (I), or pharmaceutically acceptable salts, esters, or prodrugs thereof: which inhibit Respiratory Syncytial Virus (RSV). The present invention further relates to pharmaceutical compositions comprising the aforementioned compounds for administration to a subject suffering from RSV infection. The invention also relates to methods of treating an RSV infection in a subject by administering a pharmaceutical composition comprising the compounds of the present invention.

Abstract: The present invention discloses compounds of Formula (I), or pharmaceutically acceptable salts, esters, or prodrugs thereof: which inhibit Human Respiratory Syncytial Virus (HRSV) or Human Metapneumovirus (HMPV) inhibitors. The present invention further relates to pharmaceutical compositions comprising the aforementioned compounds for administration to a subject suffering from HRSV or HMPV infection. The invention also relates to methods of treating an HRSV or HMPV infection in a subject by administering a pharmaceutical composition comprising the compounds of the present invention.

Abstract: The present invention discloses compounds of Formula (I), or pharmaceutically acceptable salts, esters, or prodrugs thereof: which inhibit Respiratory Syncytial Virus (RSV). The present invention further relates to pharmaceutical compositions comprising the aforementioned compounds for administration to a subject suffering from RSV infection. The invention also relates to methods of treating an RSV infection in a subject by administering a pharmaceutical composition comprising the compounds of the present invention.

Abstract: Disclosed is an isolated monoclonal antibody that specifically binds human 4-1BB, or the antigen-binding portion thereof. A nucleic acid molecule encoding the antibody, an expression vector, a host cell and a method for expressing the antibody are also provided. The present disclosure further provides a bispecific molecule, and a pharmaceutical composition comprising the antibody or the bispecific molecule, as well as a treatment method using an anti-4-1BB antibody of the disclosure.

Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

Abstract: A drive circuit, a drive method, a shift register, and a display device are provided. The drive circuit includes a control module, an output module, and a protect module. The control module is electrically connected to a start signal line, first and second clock signal lines, first and second potential signal lines, and first and second nodes, and is configured to transmit a voltage signal to the first and the second nodes in response to first and second clock signals. The output module is electrically connected to the first and second potential signal lines, an output wire, and the first and second nodes. The protect module is configured to transmit an effective voltage signal to the first node in response to a control signal in a first state of the drive circuit such that the output module transmits an ineffective voltage signal to the output wire.

Abstract: A display panel, a display screen, and a display device are provided. The display panel includes a display substrate; a light-emitting layer located on the display substrate and comprising a plurality of light-emitting units; an encapsulation structure disposed on the light-emitting layer to encapsulate the light-emitting layer; and a visible light conversion layer configured to receive visible lights and convert the visible lights into non-visible lights; wherein the visible light conversion layer is disposed in the encapsulation structure or the display substrate.

Abstract: Disclosed is an isolated monoclonal antibody that specifically binds human 4-1BB, or the antigen-binding portion thereof. A nucleic acid molecule encoding the antibody, an expression vector, a host cell and a method for expressing the antibody are also provided. The present disclosure further provides a bispecific molecule, and a pharmaceutical composition comprising the antibody or the bispecific molecule, as well as a treatment method using an anti-4-1BB antibody of the disclosure.

Abstract: A drive circuit, a drive method, a shift register, and a display device are provided. The drive circuit includes a control module, an output module, and a protect module. The control module is electrically connected to a start signal line, first and second clock signal lines, first and second potential signal lines, and first and second nodes, and is configured to transmit a voltage signal to the first and the second nodes in response to first and second clock signals. The output module is electrically connected to the first and second potential signal lines, an output wire, and the first and second nodes. The protect module is configured to transmit an effective voltage signal to the first node in response to a control signal in a first state of the drive circuit such that the output module transmits an ineffective voltage signal to the output wire.

Abstract: A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

Abstract: A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

Abstract: A display panel, a display screen, and a display device are provided. The display panel includes a display substrate; a light-emitting layer located on the display substrate and comprising a plurality of light-emitting units; an encapsulation structure disposed on the light-emitting layer to encapsulate the light-emitting layer; and a visible light conversion layer configured to receive visible lights and convert the visible lights into non-visible lights; wherein the visible light conversion layer is disposed in the encapsulation structure or the display substrate.

Abstract: A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

Abstract: Disclosed is an isolated monoclonal antibody that specifically binds human 4-1BB, or the antigen-binding portion thereof. A nucleic acid molecule encoding the antibody, an expression vector, a host cell and a method for expressing the antibody are also provided. The present disclosure further provides a bispecific molecule, and a pharmaceutical composition comprising the antibody or the bispecific molecule, as well as a treatment method using an anti-4-1BB antibody of the disclosure.

Abstract: A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

Abstract: A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node.