Abstract: A memory management method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of devices. The method includes dividing a plurality of memory logical units to a first logical unit group mapping to physical erasing unit of a first device and a second logical unit group mapping to physical erasing units of a second device; receiving first data stored into at least one first logical unit of the first logical unit group, and writing the first data into at least one first erasing unit, mapping to the at least one first logical unit, of the first device; and recording a wear value of every device. The method also includes performing a remapping operation corresponding to a predetermined condition if an operation status of the devices meets the predetermined condition.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: detecting a replacement physical unit number of a rewritable non-volatile memory module; adjusting an available capacity of the rewritable non-volatile memory module from a first available capacity to a second available capacity if the replacement physical unit number meets a default condition. Therefore, a lifespan of the memory storage device may be prolonged by adjusting the available capacity of the rewritable non-volatile memory module.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: detecting a replacement physical unit number of a rewritable non-volatile memory module; adjusting an available capacity of the rewritable non-volatile memory module from a first available capacity to a second available capacity if the replacement physical unit number meets a default condition. Therefore, a lifespan of the memory storage device may be prolonged by adjusting the available capacity of the rewritable non-volatile memory module.

Abstract: A memory management method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of devices. The method includes dividing a plurality of memory logical units to a first logical unit group mapping to physical erasing unit of a first device and a second logical unit group mapping to physical erasing units of a second device; receiving first data stored into at least one first logical unit of the first logical unit group, and writing the first data into at least one first erasing unit, mapping to the at least one first logical unit, of the first device; and recording a wear value of every device. The method also includes performing a remapping operation corresponding to a predetermined condition if an operation status of the devices meets the predetermined condition.