Abstract: An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO3) deposited on a n/p+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility: 1. Can be operated at room temperature, unlike quantum type IR sensors which can only operate at very low temperature (−100° C.˜−200° C.), which results in higher costs. 2. High speed response with only 2.3 &mgr;s of rise time. This is much faster than other types of thermal infrared optical field effect transistors. 3. Easy to fabricate an integrated sensor device.

Abstract: A non-volatile ferroelectric memory device has been developed, in which the lead titanate (PbTiO.sub.3) thin film is deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide and Pt is embedded in the gate oxide as the floating gate. Additionally, associated with the rapid bulk channel structure with higher mobility, the developed memory device has the following features: (1) low write/erase voltage (.ltoreq.10 V); (2) fast access time (<160 ns); (3) easy to fabricate on VLSI memory device.

Abstract: An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO.sub.3) deposited on a n/p.sup.+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility:1. Can be operated at room temperature, unlike quantum type IR sensors which can only operate at very low temperature (-100.degree. C..about.-200.degree. C.), which results in higher costs.2. High speed response with only 2.3 .mu.s of rise time. This is much faster than other types of thermal infrared optical field effect transistors.3. Easy to fabricate an integrated sensor device.

Abstract: The present invention is related to an infrared ray sensor including a substrate having a p-n junction, a ferroelectric film formed on a surface of the substrate for sensing infrared ray, and a metal film formed on the ferroelectric film for serving as an infrared-ray receiving electrode. The present invention is also related to a method for producing the IR sensor including steps of: providing the substrate having the p-n junction; depositing the ferroelectric film on the surface of the substrate in a radio frequency (RF) sputtering system; and depositing the metal film on the ferroelectric film by vapor evaporation. Alternatively, the deposition of the ferroelectric film on the surface of the substrate can be performed in a KrF pulse-mode laser evaporation system.

Abstract: A gas sensor having a large operation current and being operated at a relatively low temperature includes a substrate having a first surface and a second surface. A sensing area is provided on the first surface for increasing the conductivity across it when the sensing area detects a certain gas. A controlling area is provided on the first surface and beside the sensing area for permitting a tunneling current to pass therethrough when the sensing area cannot sense a certain gas or when the gas sensor is adapted to be sufficiently supplied with power. This control area prevents the tunneling current from being generated when the sensing area detects certain gas and thus the conductivity is increased, so that when the first and the second surfaces are electrically connected to the power supply. The gas sensor will be in an on state when the gas sensor cannot sense there is the certain gas and be in an off state when the gas sensor detects the presence of certain gas.