Patents by Inventor Jiann-Shing Lee

Jiann-Shing Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Leakage current reduction of a tantalum oxide layer via a nitrous oxide high density annealing procedure
    Patent number: 6150209
    Abstract: A process of fabricating a capacitor structure, using a tantalum oxide capacitor dielectric layer, has been developed. The process features deposition of a thin, high dielectric constant tantalum oxide layer, followed by a high density plasma anneal procedure, used to reduce the leakage current in the as-deposited tantalum oxide layer, that can evolve during normal operating conditions of the capacitor structure. The high density plasma anneal procedure is performed in a nitrous oxide ambient, at a temperature of about 400.degree. C.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: November 21, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Shi-Chung Sun, Jiann-Shing Lee