Abstract: A method for MOM capacitance value control is disclosed. The method comprises: S01: setting a target thicknesses for each metal layers; S02: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S03; S03: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S04: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Abstract: A method for MOM capacitance value control is disclosed. The method comprises: S01: setting a target thicknesses for each metal layers; S02: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S03; S03: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S04: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Abstract: The present invention discloses a method of adding an additional mask in the ion-implantation process. It relates to technical field of ion implantation. This invention comprises: a mask plate is added upon the said MPW and the nitrogen element is implanted in the said MPW; the implanted nitrogen element is used for amorphizing the upper surface of the MPW. The advantageous effects of the above technical solution are as follows: the steps of the production process are simplified; the ion implantation mask will achieve 4 different doping concentrations of the ion implantation when the wafer is implanted. It means that it is possible to form 4 different gate oxide layers of different in thickness. However, it is essential to apply the photomask three times to achieve the same effect in the process of prior art. Consequently, the method of the present invention can reduce both the cost and the term of production process.