Abstract: The present application provides a displaying base plate and a displaying device, which relates to the technical field of displaying. The displaying device can ameliorate the problem of screen greening caused by electrostatic charges, thereby improving the effect of displaying. The displaying base plate includes an active area and a non-active area connected to the active area, the non-active area includes an edge region and a first-dam region, and the first-dam region is located between the active area and the edge region; the displaying base plate further includes: a substrate; an anti-static layer disposed on the substrate, wherein the anti-static layer is located at least within the edge region; and a driving unit and a touch unit that are disposed on the substrate, wherein the driving unit is located within the active area.

Abstract: A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

Abstract: A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

Abstract: The present invention provides a preparation method of a material for a puncture-resistant artificial blood vessel. The artificial blood vessel prepared by the method comprises two layers: the dense outer layer and the electrospun inner layer, the structures of these two layers are combined tightly and are inseparable, so that the properties of blood oozing resistance and repeated puncture resistance required by the artificial blood vessel can be provided. The puncture-resistant artificial blood vessel provided by the present invention has excellent biocompatibility, blood compatibility and flexibility and has the functions of blood oozing resistance and repeated puncture resistance. The method provided by the present invention has the characteristics such as convenience in operation, simplicity in production process and liability to the realization of large scale.

Abstract: The present invention provides a preparation method preparation method for three-layer artificial blood vessel and application thereof. The three-layer artificial blood vessel comprise three layers, electrospinning inner layer, dense middle layer and electrospinning outer layer, the three-layer structure is closely combined and difficult to separate. The inner layer with a cytoskeleton-like structure can promote the formation of intima; the dense middle layer can effectively prevent the leakage of biomacromolecules and increase the puncture resistance of the whole artificial blood vessel; and the outer layer can promote the growth of tissue cells and better integrate with tissue. The three-layer artificial blood vessel provided by the invention has excellent blood compatibility, good flexibility, good puncture resistance and interlayer peeling resistance. The preparation method is convenient and is suitable for industrial scale production.

Abstract: A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber (1) and an optical detector (6). The MOCVD reactor chamber (1) comprises an epitaxial wafer (4). A detection window (5) is provided on the top of the MOCVD reactor chamber (1). The optical detector (6) emits detection light beams whose wavelengths are respectively ?1 and ?2 toward the epitaxial wafer (4) through the detection window (5). The detection light beams are reflected by the epitaxial wafer (4) to form reflected light beams which are detected by the optical detector (6). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain m1 and m2 respectively.

Abstract: An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.

Abstract: A device for detecting a two-dimensional morphology of a wafer substrate in real time. The device comprises: a first calculation module, a second calculation module and an analysis module, wherein the first calculation module calculates the curvature CX between any two points of incidence on the wafer substrate in an X direction of a substrate to be detected according to position signals of N light spots; the second calculation module calculates the curvature CY at any one point of incidence on the wafer substrate in a moving direction, i.e. a Y direction, of the substrate to be detected according to the position signals of N light spots. The device can be adapted to a sapphire substrate on a graphite disc which rotates at a high speed.

Abstract: An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.

Abstract: A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber (1) and an optical detector (6). The MOCVD reactor chamber (1) comprises an epitaxial wafer (4). A detection window (5) is provided on the top of the MOCVD reactor chamber (1). The optical detector (6) emits detection light beams whose wavelengths are respectively ?1 and ?2 toward the epitaxial wafer (4) through the detection window (5). The detection light beams are reflected by the epitaxial wafer (4) to form reflected light beams which are detected by the optical detector (6). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain m1 and m2 respectively.

Abstract: Disclosed is an apparatus for automatically and quickly detecting a two-dimensional morphology of a wafer substrate in real time. The apparatus may comprise: a first calculation module, a second calculation module and an analysis module, wherein the first calculation module calculates a curvature CX between any two points of incidence on the wafer substrate in an X direction of a substrate to be detected according to position signals of N light spots; the second calculation module calculates a curvature CY of any point of incidence on the wafer substrate in a moving direction, i.e., a Y direction of the substrate to be detected according to the position signals of the N light spots, wherein N is a natural number of 3 or more, and the N light spots are formed by N laser beams which are incident on the wafer substrate in a radial direction, i.e.