Abstract: Technology is disclosed herein that the enhances the measurability of on-chip temperature in a cryogenic quantum computing environment. In an implementation, transceiver circuitry sends a probe signal through a target device. A lumped-element resonator device that is proximate to the surface of the target device interacts with the probe signal and modulates the probe signal. Processing circuitry reads the probe signal through the target device, and responsively measures the resonance frequency of the lumped-element resonator device. The processing circuitry correlates the measured resonance frequency with a temperature and responsively determines the temperature of the target device.

Abstract: This invention relates to a quantum computing device and the means for fabrication thereof. One side of the device includes a circuit containing at least one qubit patterned in a film of superconducting material. The other side of the device includes a conductive plane, also formed from a film of superconducting material. The proximity of the conductive plane suppresses radiative decay of the qubit, while readout is achieved by coupling the qubit to a resonator.

Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.

Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.