Abstract: A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.

Abstract: Herein provided is a multilayered structure including one or more nanocrystalline layers each comprising a transition metal dichalcogenide, one or more substantially amorphous electrically insulating layers each comprising a transition metal oxide, wherein the transition metal oxide comprises a transition metal which is identical to the transition metal of the transition metal dichalcogenide, wherein the one or more nanocrystalline layers and the one or more substantially amorphous electrically insulating layers are formed in an alternating manner, and wherein each of the one or more nanocrystalline layers is formed adjacent to the substantially amorphous insulating layer. A resistive memory device comprising the multilayered structure and a process of fabricating the multilayered structure are also disclosed herein.

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

Abstract: The instant invention provides a process for making metal or metalloid dichalcogenides from a metal or metalloid and elemental chalcogen using magnetron sputtering. The process may comprise the steps of directing sputtering gas ions at a metal or metalloid target, reacting the ejected metal or metalloid atoms from the target surface with an elemental chalcogen vapor and assembling the metal or metalloid dichalcogenides on a substrate. It can be used to make thin films of the dichalcogenides which have a use in layered semiconductor devices. The process of the invention is suitable for upscaling to potentially make the films on a wafer level. Films on large areas with high uniformity have for instance been obtained utilizing the reaction of the metal or metalloid in an ambient of vaporized chalcogen under controlled conditions and with low growth rates. The process of the invention can be used to deposit two dimensional channels as part of field effect transistors.