Patents by Inventor Jianwen Dong

Jianwen Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12243952
    Abstract: The present disclosure provides a double-sided passivated contact cell, where a front side and a rear side of the double-sided passivated contact cell each are provided with a tunnel layer, a doped polysilicon layer, and a passivation layer sequentially from an inside to an outside; and for the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side, one of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a boron and carbon co-doped polysilicon layer, and the other of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a phosphorus and carbon co-doped polysilicon layer. The present disclosure further provides a preparation method of the double-sided passivated contact cell.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: March 4, 2025
    Assignee: CHANGZHOU SHICHUANG ENERGY CO., LTD
    Inventors: Changrui Ren, Songbo Yang, Jianwen Dong, Liming Fu
  • Publication number: 20250015221
    Abstract: The present disclosure provides a double-sided passivated contact cell, where a front side and a rear side of the double-sided passivated contact cell each are provided with a tunnel layer, a doped polysilicon layer, and a passivation layer sequentially from an inside to an outside; and for the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side, one of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a boron and carbon co-doped polysilicon layer, and the other of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a phosphorus and carbon co-doped polysilicon layer. The present disclosure further provides a preparation method of the double-sided passivated contact cell.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 9, 2025
    Applicant: CHANGZHOU SHICHUANG ENERGY CO., LTD
    Inventors: Changrui REN, Songbo YANG, Jianwen DONG, Liming FU
  • Patent number: 11454739
    Abstract: A method is disclosed of fabricating all-dielectric flat lens with low refractive index comprising: selecting dielectric substrate material and lens structure material; determining incident wavelength; calculating phase modulation corresponding to each pillar unit; periodically sampling circular area of dielectric substrate with radius to obtain plurality of sampling points; calculating phase modulation required at position of each sampling point; obtaining pillar corresponding to each sampling point; arranging different dielectric pillars with low refractive index and same thickness are arranged on dielectric substrate, thereby obtaining all dielectric flat lens with low refractive index.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: September 27, 2022
    Assignee: Sun Yat-Sen University
    Inventors: Jianwen Dong, Zhibin Fan, Yujie Chen, Zengkai Shao, Siyuan Yu
  • Publication number: 20190339417
    Abstract: A method is disclosed of fabricating all-dielectric flat lens with low refractive index comprising: selecting dielectric substrate material and lens structure material; determining incident wavelength; calculating phase modulation corresponding to each pillar unit; periodically sampling circular area of dielectric substrate with radius to obtain plurality of sampling points; calculating phase modulation required at position each sampling point; obtaining pillar corresponding to each sampling point; arranging different dielectric pillars with low refractive index and same thickness are arranged on dielectric substrate, thereby obtaining all dielectric flat lens with low refractive index.
    Type: Application
    Filed: April 13, 2018
    Publication date: November 7, 2019
    Applicants: Sun Yat-Sen University, Sun Yat-Sen University
    Inventors: Jianwen Dong, Zhibin Fan, Yujie Chen, Zengkai Shao, Siyuan Yu