Abstract: Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectric structures, and partially recessing the silicon protrusion in order to provide a trench in between adjacent STI structures, and to provide a V-shaped groove at an upper surface of the recessed protrusion. The method also includes growing a Si1-xGex SRB layer in the trenches, and growing a germanium based channel layer on the Si1-xGex SRB layer. In this example, the Si1-xGex SRB layer comprises a germanium content x that is within the range of 20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosure also relates to an associated transistor device.

Abstract: Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectric structures, and partially recessing the silicon protrusion in order to provide a trench in between adjacent STI structures, and to provide a V-shaped groove at an upper surface of the recessed protrusion. The method also includes growing a Si1-xGex SRB layer in the trenches, and growing a germanium based channel layer on the Si1-xGex SRB layer. In this example, the Si1-xGex SRB layer comprises a germanium content x that is within the range of 20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosure also relates to an associated transistor device.

Abstract: The invention relates to a heat insulation cold closet for medical supplies, comprising a closet body with an opening, and a cover body sealed and meshed with the opening; the closet body, from inside to outside, successively consists of a rigid polyurethane layer, a vacuum heat insulation panel layer, a foamed polyurethane panel layer and a housing. The coefficient of heat insulation is smaller than or equal to 0.004 W/mK, heat radiation, heat conduction and heat convection between the interior of the closet body and the external environment can be effectively prevented, and the heat insulation closet can guarantee that the interior temperature is controlled at 2-8° C. for more than 120 hours. The heat insulation cold closet according to the present invention is mainly used for cold storage and freezing of drugs, such as vaccines, insulin, blood products, biological products and reagents, during transportation and storage.