Abstract: A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract: A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract: A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.

Abstract: A transceiver system may include a laser and a silicon optical grating. The laser may be configured to emit a laser beam at an output of the laser. The laser beam may have a non-circular elliptical mode profile. The silicon grating may be configured to exhibit a mode profile having a shape corresponding to the non-circular elliptical mode profile of the laser beam.

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a silicon (Si) core having first refractive index n1 and a tapered end. The at least one second waveguide each has a silicon nitride (SiN) core having a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The third waveguide of the interposer has an optical mode size that is similar to the mode size of a standard single mode optical fiber.

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract: A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a silicon (Si) core having first refractive index n1 and a tapered end. The at least one second waveguide each has a silicon nitride (SiN) core having a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The third waveguide of the interposer has an optical mode size that is similar to the mode size of a standard single mode optical fiber.

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a first refractive index n1 and a tapered end. The at least one second waveguide each has a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The coupled system is configured to adiabatically couple light between the first waveguide and the at least one second waveguide and between the at least one second waveguide and the third waveguide.

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a first refractive index n1 and a tapered end. The at least one second waveguide each has a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The coupled system is configured to adiabatically couple light between the first waveguide and the at least one second waveguide and between the at least one second waveguide and the third waveguide.

Abstract: A light source includes a hot electron source comprising a cathode that generates an electron beam and an anode comprising a germanium containing material positioned adjacent to the cathode. The anode is biased so that the electron beam accelerates towards the anode where some electrons are absorbed and then relax to both direct energy bands and indirect energy bands causing stimulation of low energy electrons from the indirect energy band to the direct energy band, thereby creating electroluminescence.

Abstract: A light source includes a hot electron source comprising a cathode that generates an electron beam and an anode comprising a germanium containing material positioned adjacent to the cathode. The anode is biased so that the electron beam accelerates towards the anode where some electrons are absorbed and then relax to both direct energy bands and indirect energy bands causing stimulation of low energy electrons from the indirect energy band to the direct energy band, thereby creating electroluminescence.

Abstract: A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the V?·L product of the modulator.

Abstract: The invention provides tunable delay or resonator devices in an electro optical substrate. Signals in at least one waveguide in the electro optical substrate pass through Y-junction reflectors which direct signals from one branch of the waveguide back into another branch of the waveguide. A coupled delay or resonator approximated loop is presented in an embodiment of the invention with opposing Y-junction reflectors. In other embodiments of the invention, a delay ladder is provided with selectable levels of delay from multiple outputs.

Abstract: A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the V?·L product of the modulator.

Abstract: A photodetector includes an optical distribution device having an optical input that receives an input optical signal and an optical waveguide grating coupler that converts the input optical signal from a longitudinal direction radiation mode to a surface-emitted radiation mode and that distributes the optical signal along a length of the optical waveguide grating coupler and emits the distributed optical signal from the surface. An optical detector includes an optical input that is positioned to receive the distributed optical signal emitted from the optical distribution device along a length the optical waveguide grating coupler. The optical detector generates a traveling wave RF signal. The optical distribution device reduces the optical power density of the input optical signal, thereby avoiding local saturation and damage to the optical detector.