Abstract: The present application belongs to the field of packaging technology, and particularly relates to a packaging structure for an RF front-end module. Through the interaction of the support structure and the first adhesive part arranged on the substrate, a cavity structure is formed between the first filter chip and the first surface of the substrate. Moreover, the first adhesive part does not require excessive area coverage, allowing for material savings. This design ensures the formation of a cavity between the filter chip and the substrate while maintaining cost efficiency, and it also improves the reliability of the packaging structure of an RF front-end module.

Abstract: Provided are a PA output matching circuit, a RF front-end module and a wireless device. The circuit is used for connecting with a first PA output and a second PA output of an output stage of a push-pull PA, and comprises a load balun, a first DC blocking circuit, a second DC blocking circuit, a first feed circuit and a second feed circuit; the main coil of the load balun is provided with a first balun input and a second balun input; the first balun input is connected with the first PA output via the first DC blocking circuit, and the first balun input is connected with the first PA output via the first feed circuit; the second balun input is connected with the second PA output via the second DC blocking circuit, and the second balun input is connected with the second PA output via the second feed circuit.

Abstract: The application discloses an RF front-end module, including a substrate, and a first power amplification unit and a second power amplification unit arranged on the substrate; the first power amplification unit comprises a first amplification chip and a first transformer connected with the first amplification chip; the second power amplification unit comprises a second amplification chip and a second transformer connected with the second amplification chip; the first amplification chip and the first transformer are sequentially arranged along a first direction, and the second amplification chip and the second transformer are sequentially arranged along a second direction; and a first virtual straight line extending along the first direction and a second virtual straight line extending along the second direction intersect each other.

Abstract: The application discloses an RF push-pull power amplifier chip, wherein the second end of the first capacitor is connected to the first pad of the chip, and the second end of the second capacitor is connected to the second pad of the chip, and the first pad is bonded to the second pad by a wire. The first capacitor, second capacitor and wire form an impedance matching circuit, which participates in impedance matching of the chip together with the first balun. In this way, the RF push-pull power amplifier chip can support a larger bandwidth, and the equivalent inductance can be changed by adjusting the length of the wire, so that the impedance matching circuit can be adjusted more flexibly in a limited chip area. Therefore, the bandwidth performance of the RF push-pull power amplifier chip would not be affected, and the occupied area of the chip can be reduced.

Abstract: Provided are a PA output matching circuit, a RF front-end module and a wireless device. The circuit is used for connecting with a first PA output and a second PA output of an output stage of a push-pull PA, and comprises a load balun, a first DC blocking circuit, a second DC blocking circuit, a first feed circuit and a second feed circuit; the main coil of the load balun is provided with a first balun input and a second balun input; the first balun input is connected with the first PA output via the first DC blocking circuit, and the first balun input is connected with the first PA output via the first feed circuit; the second balun input is connected with the second PA output via the second DC blocking circuit, and the second balun input is connected with the second PA output via the second feed circuit.

Abstract: Discloses is a push-pull RF power amplifier circuit, comprising a first differential amplifier transistor, a second differential amplifier transistor, a first balun and a capacitor network. In this application, the primary coil of first balun is improved into a structure in which the first and second coil segment are connected with each other, and the capacitor network is connected at the joint of the first and second coil segment. The capacitor network and first balun jointly participate in impedance matching of the push-pull RF power amplifier circuit, so that the push-pull power amplifier system can support larger bandwidth while achieving impedance matching. There is no need to separately connect capacitors between the output end of the first differential amplifier transistor and the first input end of the first balun, or between the output end of the second differential amplifier transistor and the second input end of the first balun.

Abstract: Disclosed are a low noise amplifier circuit and an RF front-end module. The low noise amplifier circuit includes a signal input end, a signal output end, a first amplifier circuit, a second amplifier circuit and a first switching circuit; the first amplifier circuit and second amplifier circuit are connected in series between an signal input end and an signal output end; an end of the first switching circuit is connected with an output end of the first amplifier circuit, and another end is connected with the signal output end. It is configured that the first switching circuit is turned on when the low noise amplifier circuit works in the high linearity mode, and the first switching circuit is turned off when the low noise amplifier circuit works in the high gain mode. The application can effectively enhance the gain and linearity of the low noise amplifier circuit.

Abstract: Provided are an input impedance matching network and a RF front-end module. The input impedance matching network comprises a first pad, a second pad, and a first inductor with one end connected to the first pad and another end connected to the second pad; an output end of the second pad, as an output end of the input impedance matching network, is configured to be connected to an input end of a low noise amplifier; the input impedance matching network further comprises a compensation regulation circuit connected with the first pad and/or the second pad, and the compensation regulation circuit is configured to regulate a parasitic capacitance of the first pad to the ground and/or a parasitic capacitance of the second pad to the ground, so that the parasitic capacitance of the first pad to the ground is greater than that of the second pad to the ground.

Abstract: In order to solve the problem that signals often interfere with one another in the RF front-end module in the prior art, the application provides an RF front-end module, an antenna device and a control method for the RF front-end module. The module comprises an antenna switch selection module, an RF signal transmitting link, a first RF signal receiving link and a second RF signal receiving link; the RF signal transmitting link, first RF signal receiving link and second RF signal receiving link are separately connected to a first inner peripheral port, second inner peripheral port and third inner peripheral port respectively. The antenna device and RF front-end module thereof improve the isolation effect. When the RF front-end circuit receives a plurality of RF signals at the same time, the isolation among different RF signals at the antenna switch selection module is higher than that in the prior art.

Abstract: The application discloses an RF front-end module, comprising a conversion transformer, the conversion transformer comprises a primary winding and a secondary winding located on the same metal layer of a substrate; a first primary coil and first secondary coil are coupled to form a first coupling coil, and a second primary coil and second secondary coil are coupled to form a second coupling coil; when the current direction of the side adjacent to the second coupling coil in the first coupling coil is the same as that of the side adjacent to the first coupling coil in the second coupling coil, the first coupling coil and the second coupling coil are arranged adjacent to each other; when these two current directions are opposite to each other, the first coupling coil and the second coupling coil are arranged away from each other.

Abstract: The application discloses an RF front-end module. The second RF amplifier circuit and the third RF amplifier circuit are integrated in a second RF chip, and the first RF amplifier circuit is integrated in a first RF chip; the RF signals output by the first RF amplifier circuit and the second RF amplifier circuit are output via the first switch chip, and the RF signals output by the third RF amplifier circuit are output via the second switch chip. In this way, two RF amplifier circuits with different frequency bands are integrated into one chip to improve the integration level, and meanwhile, the signal traces on the substrate can be reduced to avoid unnecessary losses caused by too many traces, thus meeting the requirements of RF front-end modules for performance and area.

Abstract: Disclosed is an RF module. The substrate includes a first layout area and a second layout area. The first RF chip is located in the first layout area, including a first power amplifier and a second power amplifier. The first switch chip is arranged in the first layout area and connected to the output ends of the first and second power amplifier. The second RF chip is arranged in second layout area, including a third power amplifier. The second switch chip is arranged in the second layout area and connected to the output end of the third power amplifier. The RF module shortens the transmission distance of RF signals between the first RF chip and first switch chip and between the second RF chip and second switch chip by arranging components in two areas separately, thus reducing the insertion loss and interference and improving the output quality of RF signals.

Abstract: Provided is a low noise amplification circuit, comprising: a RF amplification circuit, one end of which is connected with a signal input end, another end is connected with the output impedance matching circuit; an output impedance matching circuit, one end of which is connected with the RF amplification circuit, another end is connected with the attenuation network; an attenuation network, one end of which is connected with the output impedance matching circuit, another end is connected with a signal output end; a passive attenuation path, one end of which is connected with the signal input end, another end is connected with a connection node between the matching circuit and the network; and an impedance regulation network, configured to, in a first working mode, resonate with a parasitic capacitance generated by the network, in a second working mode, resonate with a parasitic capacitance generated by the network and the attenuation path.

Abstract: Filters and acoustic resonators for radio-frequency circuits and devices. In some embodiments, a radio-frequency circuit can include a plurality of nodes and a common node. The radio-frequency circuit can further include a signal path implemented between each of the plurality of nodes and the common node. Each corresponding signal path can include a filter having a first Q-factor value and a respective resonator having a second Q-factor value higher than the first Q-factor value.

Abstract: A reconfigurable triplexer that can support more frequency bands than a traditional triplexer is disclosed. For example, the reconfigurable triplexer can handle frequencies of several hundred megahertz up to 10 gigahertz. Further, certain implementations of the reconfigurable multiplexer can reduce or eliminate frequency dead zones that exist with traditional multiplexers. The reconfigurable triplexer includes a multi-stage filter bank capable of supporting a number of frequency bands and a bypass circuit that enables the triplexer to support a variety of sets of frequencies. For instance, unlike traditional triplexers, the reconfigurable triplexer can support both frequency bands with relatively narrow spacing and frequency bands with relatively wide spacing. Further, the inclusion of the bypass circuit enables the reduction or elimination of dead zones between supported frequencies.

Abstract: Provided are a gain compensation device and a bias circuit device. A compensation bias current is generated by the gain compensation device to compensate the gain deviation of power amplifier and improve stability of power amplifier. Through high-temperature compensation unit and low-temperature compensation unit in different gears, gain of power amplifier is compensated along with temperature changes, thereby improving feasibility of the gain compensation device. It takes small space, and the circuit only includes the circuits corresponding to high-temperature compensation unit and low-temperature compensation unit, so the circuit is relatively simple and beneficial to miniaturization.

Abstract: Circuits with filters and acoustic resonators. In some embodiments, a radio-frequency circuit can include a plurality of nodes and a common node. The radio-frequency circuit can further include a signal path implemented between each of the plurality of nodes and the common node. Each corresponding signal path can include a filter having a first Q-factor value and a respective resonator having a second Q-factor value higher than the first Q-factor value.

Abstract: Provided are an RF front-end architecture, an antenna device and a communication terminal. The RF front-end architecture comprises a primary RF front-end module and a secondary RF front-end module. The communication terminal optimizes the RF front-end architecture on the internal antenna device, and is able to work in a multi-antenna working mode to realize the receiving and transmission of multiplex RF signals. The architecture is relatively simple in structure, only two RF front-end modules are needed to realize multiplex transmission and multiplex receiving of RF signals, meanwhile, different frequency band signals which need to be accessed can be flexibly controlled and adjusted. Moreover, the low noise amplifiers in the architecture all support the amplification of multi-band frequency signals, which can ensure the realization of 1T4R, 2T4R and other functions in fewer RF front-end modules, ensure the realization of rich function of the architecture, and reduce the area of the architecture.

Abstract: Provided are an interstage matching circuit and a push-pull power amplifier circuit. The push-pull power amplifier circuit comprises a pre-stage push-pull amplifier circuit and a post-stage push-pull amplifier circuit.

Abstract: The radio-frequency differential circuit includes an input balun, an output balun, a first differential amplifying circuit, a second differential amplifying circuit, a first linear feedback circuit and a second linear feedback circuit; the first differential amplifying circuit is arranged between a first output end of the input balun and a first input end of the output balun; the second differential amplifying circuit is arranged between a second output end of the input balun and a second input end of the output balun; a first end of the first linear feedback circuit is connected with the input balun, a second end of the first linear feedback circuit is connected with the first differential amplifying circuit; a first end of the second linear feedback circuit is connected with the input balun, and a second end of the second linear feedback circuit is connected with the second differential amplifying circuit.