Abstract: The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n?1; growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials.

Abstract: The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n?1; growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials.