Abstract: A composite comprising a conducting polymer and a graphene-based material is provided. The composite includes a graphene-based material doped with nitrogen or having a nitrogen-containing species grafted thereon, and a conducting polymer arranged on the graphene-based material. Methods of preparing the composite, and electrodes formed from the composite are also provided.

Abstract: The present invention relates to a novel method for preparing a new type of catalyst for the oxidation of CO in a reactant gas or air. The method provides the preparation of a catalyst having nano-sized metal particles and a capping agent deposited on a solid support. The size and distribution of the metal particles can be easily controlled by adjusting reaction condition and the capping agent used. The catalyst prepared has high activity at low temperature toward selective oxidation of CO and is stable over an extended period of time. The catalyst can be used in air filter devices, hydrogen purification processes, automotive emission control devices (decomposition of NOx, x is the integer 1 or 2), F-T synthesis, preparation of fuel-cell electrode, photocatalysis and sensors.

Abstract: A composite comprising a conducting polymer and a graphene-based material is provided. The composite includes a graphene-based material doped with nitrogen or having a nitrogen-containing species grafted thereon, and a conducting polymer arranged on the graphene-based material. Methods of preparing the composite, and electrodes formed from the composite are also provided.

Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.

Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.

Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.

Abstract: The present invention relates to a method of functionalizing a carbon material. A carbon material is contacted with a carboxylic acid, whereby a mixture is formed. The mixture is heated for a suitable period of time at a temperature below the thermal decomposition temperature of the carbon material.

Abstract: A process for releasing hydrogen gas is disclosed. The process comprises the step of irradiating hydrogen storage particles dispersed within thermal promoter particles under conditions to release said hydrogen from said hydrogen storage particles. A system for implementing the process as well as uses for the hydrogen gas released from the above process are disclosed.

Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.

Abstract: The present invention relates to a novel method for preparing a new type of catalyst for the oxidation of CO in a reactant gas or air. The method provides the preparation of a catalyst having nano-sized metal particles and a capping agent deposited on a solid support. The size and distribution of the metal particles can be easily controlled by adjusting reaction condition and the capping agent used. The catalyst prepared has high activity at low temperature toward selective oxidation of CO and is stable over an extended period of time. The catalyst can be used in air filter devices, hydrogen purification processes, automotive emission control devices (decomposition of NOx, x is the integer 1 or 2), F-T synthesis, preparation of fuel-cell electrode, photocatalysis and sensors.

Abstract: This invention relates to a method of producing multi-walled carbon nanotubes (MWNT) by catalytic decomposition of gaseous carbon-containing compounds over a transition metal-based catalyst. The catalyst comprises A-B and a support, wherein A is selected from the group VIII transition metal elements and B is selected from the Group VIB transition metal elements. An additional aspect of this invention includes a method of preparing hydrogen gas.

Abstract: In one aspect, the invention provides a catalyst for the production of synthesis gas, the catalyst comprising a) from about 0.1 to about 1.3% by weight of nickel that is supported on modified support, and b) a promoting agent. The catalyst can also comprise a dispersing agent. In another aspect, the invention provides a process for preparing the catalyst above, and a process for the catalytic partial oxidation of methane using the same catalyst.

Abstract: In one aspect, the invention provides a catalyst for the production of synthesis gas, the catalyst comprising a) from about 0.1 to about 1.3% by weight of nickel that is supported on modified support, and b) a promoting agent. The catalyst can also comprise a dispersing agent. In another aspect, the invention provides a process for preparing the catalyst above, and a process for the catalytic partial oxidation of methane using the same catalyst.

Abstract: This invention relates to a method of producing multi-walled carbon nanotubes (MWNT) by catalytic decomposition of gaseous carbon-containing compounds over a transition metal-based catalyst. The catalyst comprises A-B and a support, wherein A is selected from the group VIII transition metal elements and B is selected from the Group VIB transition metal elements. An additional aspect of this invention includes a method of preparing hydrogen gas.

Abstract: Alkali metal-carbon compounds may be formed by mixing an alkali metal with carbon. Such alkali metal-carbon compounds absorb hydrogen at lower temperatures and may be useful as hydrogen storage materials in various applications, such as in hydrogen fuel cells.

Abstract: This invention is directed to a method of reversibly storing hydrogen comprising exposing a solid sorbent of metal-doped carbon-based material to a hydrogen atmosphere at a temperature of from about 250 K to about 973 K under ambient or higher pressure. The metal-doped carbon-based material is generally an alkali metal-doped carbon-based material prepared by mixing a carbon material with an alkali metal salt and calcining the mixture under an atmosphere of inert or reductive gas.

Abstract: A method for forming metal particles and fibers, including: mixing at least one of nanotubes and nanofibers with at least one metal salt to form a mixture, and decomposing and reducing the mixture. The method of syntheses metal nanoparticles and fibers, such as Cu, Pd, Pt, Ag and Au nanoparticles and Cu sub-micron fibers, by using carbon nanotubes or carbon nanofibers as templates.