Abstract: The present invention discloses a microminiature image acquisition and processing system package structure and a preparation method thereof. This structure includes optical coated glass, a CMOS chip, a wafer Re-Distribution Layer and a molding layer, the first surface of the CMOS chip is provided with a photosensitive and microlens region and a metal bonding pad, and a through-silicon via is etched in a second surface of the CMOS chip until it extends to the metal bonding pad on the first surface; the wafer Re-Distribution Layer covers the second surface of the CMOS chip and extends to the through-silicon via. The structure and the method of the present invention are integrated with wafer-level package and SIP integrated package technologies to achieve single package of the whole device, thereby greatly reducing the system complexity and power consumption, reducing the overall product size and signal path, and improving the image anti-interference capability.

Abstract: The present application discloses a double-sided SiP packaging structure and a manufacturing method thereof, wherein the double-sided SiP packaging structure comprises a substrate, a first packaging structure arranged on the substrate, and a second packaging structure arranged below the substrate; the second packaging structure comprises a chip, interposer and a molding material; a conductive structure array is arranged on an upper surface of the interposer; the interposer is arranged below the substrate through the conductive structure array; a space region among a lower surface of the substrate, the chip and the interposer is filled with the molding material; a conductive bonding pad array is arranged on the lower surface of the interposer; and a groove is formed in a part of region between the conductive bonding pad and an edge contour of the interposer.