Abstract: A system-in-package (SiP) system-integration integrated circuit (IC) chip package and a manufacturing method thereof are provided. The package includes a substrate, a passive device and two IC chips are provided on the substrate, an adhesive film is disposed between each of the two IC chips and the substrate, the IC chips are connected to first pads on the substrate through bonding wires, and the substrate is covered by a mold cap. A third IC chip may be further disposed on one of the IC chips, and the third IC chip is connected to the first pad and the IC chip under the third IC chip respectively through a bonding wire. A substrate adopting a surface mount technology (SMT) PAD window-opening manner is used, chip mounting is performed on the substrate, and the substrate undergoes reflow soldering, cleaning, die bonding, plasma cleaning, bonding, marking, cutting, and packing, so that the SiP system-integration IC chip package is manufactured.

Abstract: A high-density Subscriber Identity Module (SIM) card package and a production method thereof are provided. The SIM card package includes a substrate, an Integrated Circuit (IC) chip, a bonding wire, and a mold cap. The substrate is a two-layer, a four-layer, a six-layer or an eight-layer high-density interlinked and packaged organic laminated substrate that is manufactured through an etching-back process, and a passive device and a crystal oscillator are provided on the organic laminated substrate. Two IC chips are provided side by side, or one of the IC chips is stacked with a third IC chip, the third IC chip being respectively connected to the organic laminated substrate and the IC chip under the third IC chip by the bonding wire. The IC chip, the passive device, and the crystal oscillator are adhered to the organic laminated substrate.

Abstract: A high-density Subscriber Identity Module (SIM) card package and a production method thereof are provided. The SIM card package includes a substrate, an Integrated Circuit (IC) chip, a bonding wire, and a mold cap. The substrate is a two-layer, a four-layer, a six-layer or an eight-layer high-density interlinked and packaged organic laminated substrate that is manufactured through an etching-back process, and a passive device and a crystal oscillator are provided on the organic laminated substrate. Two IC chips are provided side by side, or one of the IC chips is stacked with a third IC chip, the third IC chip being respectively connected to the organic laminated substrate and the IC chip under the third IC chip by the bonding wire.

Abstract: A system-in-package (SiP) system-integration integrated circuit (IC) chip package and a manufacturing method thereof are provided. The package includes a substrate, a passive device and two IC chips are provided on the substrate, an adhesive film is disposed between each of the two IC chips and the substrate, the IC chips are connected to first pads on the substrate through bonding wires, and the substrate is covered by a mold cap. A third IC chip may be further disposed on one of the IC chips, and the third IC chip is connected to the first pad and the IC chip under the third IC chip respectively through a bonding wire. A substrate adopting a surface mount technology (SMT) PAD window-opening manner is used, chip mounting is performed on the substrate, and the substrate undergoes reflow soldering, cleaning, die bonding, plasma cleaning, bonding, marking, cutting, and packing, so that the SiP system-integration IC chip package is manufactured.