Patents by Inventor Jian-Yuan Chen

Jian-Yuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin field-effect transistor and method of forming the same
    Patent number: 11996470
    Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jian-Jou Lian, Tzu Ang Chiang, Ming-Hsi Yeh, Chun-Neng Lin, Po-Yuan Wang, Chieh-Wei Chen
  • Chamber Conditioning Method
    Publication number: 20130064973
    Abstract: A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 14, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Yu Chen, Chia-Ming Tsai, Liang-Chen Chi, Jian-Yuan Chen, Ke-Chih Liu