Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.

Abstract: One embodiment of the present invention is a hollow silica nanomaterial (HSN). The HSN includes silicon dioxide (SiO2) molecules which join together to form a shell. The shell extends from a first end to a second end and has a generally circular cross section, an inner surface and an opposite outer surface. Another embodiment of the present invention includes a method for forming an HSN. The method includes combining polyvinylpyrrolidone (PVP) and an alcohol to form a mixture, adding water to the mixture, adding sodium citrate to the mixture, adding a silicon-containing compound to the mixture, adding a catalyst to the mixture, and collecting hollow silica nanomaterials.

Abstract: One embodiment of the present invention is a hollow silica nanomaterial (HSN). The HSN includes silicon dioxide (SiO2) molecules which join together to form a shell. The shell extends from a first end to a second end and has a generally circular cross section, an inner surface and an opposite outer surface. Another embodiment of the present invention includes a method for forming an HSN. The method includes combining polyvinylpyrrolidone (PVP) and an alcohol to form a mixture, adding water to the mixture, adding sodium citrate to the mixture, adding a silicon-containing compound to the mixture, adding a catalyst to the mixture, and collecting hollow silica nanomaterials.