Abstract: Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.

Abstract: A tool for use in fabricating an electronic component includes a plurality of processing modules and a transfer chamber in communication with each of the plurality of processing modules. The transfer chamber includes a component for transferring a structure to each of the plurality of processing modules. The plurality of processing modules and the transfer chamber are sealed from the surrounding environment and are under a vacuum. The plurality of processing modules includes a first module configured to perform a first process on the structure and a second module configured to perform a second process on the structure. The first process includes performing at least one shaping operation on the structure.

Abstract: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer.

Abstract: An apparatus includes a write pole magnetically coupled to write coils that generate a first magnetic field during a switching event. The apparatus includes a shield at a media-facing surface and proximate the write pole. A conductive element is disposed proximate the shield and configured to generate a second magnetic field opposite to the first magnetic field during the switching event. A selected one of the write coils is located adjacent the shield separate from others of the write coils.

Abstract: In accordance with one embodiment, a method may be implemented by depositing a non-magnetic gap layer of material above a main pole layer of magnetic material; depositing a sacrificial layer of material above the non-magnetic gap layer of material; etching a portion of the sacrificial layer of material while not entirely removing the sacrificial layer of material; and depositing additional sacrificial material to the etched sacrificial layer.

Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.

Abstract: A magnetoresistive sensor is generally disclosed. Various embodiments of a sensor can have at least a trilayer sensor stack biased with a back biasing magnet adjacent a back of the trilayer sensor. The back biasing magnet, the trilayer sensor stack, or both have substantially trapezoidal shapes to enhance the biasing field and to minimize noise.

Abstract: A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.

Abstract: An apparatus includes a write pole magnetically coupled to write coils that generate a first magnetic field during a switching event. The apparatus includes a shield at a media-facing surface and proximate the write pole. A conductive element is disposed proximate the shield and configured to generate a second magnetic field opposite to the first magnetic field during the switching event. A selected one of the write coils is located adjacent the shield separate from others of the write coils.

Abstract: Various embodiments generally relate to a magnetic sensor, and more specifically to a magnetoresistive read head sensor. In one such exemplary embodiment, a magnetic sensor comprises a sensor stack and magnetic bias elements positioned adjacent opposite sides of the sensor stack. At least one of the bias elements has a non-rectangular shape, such as substantially trapezoidal or parallelogram shapes having non-perpendicular corners.

Abstract: A trilayer magnetoresistive sensor has at least first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.

Abstract: A multi-axis GMR or TGMR based magnetic field sensor system is disclosed. Preferably a three axis sensor system is provided for sensing magnetic flux along three mutually orthogonal axes, which can be used for magnetic compass or other magnetic field sensing applications. The sensing units are operative to sense X and Y axis magnetic flux signals in the device (XY) plane, while Z axis sensitivity is achieved by use of a continuous ring shaped or octagonal magnetic concentrator that is adapted to convert the Z axis magnetic flux signal into magnetic flux signals in the XY plane.

Abstract: Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.

Abstract: A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.

Abstract: In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

Abstract: A multilayer structure and method for making the same. In accordance with some embodiments, a multilayer structure has a first layer of Fe, a layer of A1 phase FePt on the first layer of Fe, and a second layer o Fe on the layer of FePt. The multilayer structure is annealed to convert the A1 phase FePt to L1o phase FePt.

Abstract: A patterned magnetic recording media and method thereof is provided. A recording layer comprises a continuous surface of more-noble elements and less-noble elements, such as CoXYZ, wherein X can be Pt, Pd, Ru, Rh, Ir, Os, or Au, wherein Y can be null or Cr, and wherein Z can be null, Cu, Ta, Ti, O, B, Ag, or TiO2. The recording layer is masked, shielding areas for recording domains and exposing areas between the recording domains. A voltage bias establishes the substrate as an anode in the presence of Pt cathode, in an electrolyte bath. Ions of the less-noble element are anodically removed predominantly from the exposed areas of the recording layer for a controlled time. The controlled time minimizes oxidation of the nobler element and reduces undercutting of the recording domains. The article produced can have separating areas with surfaces substantially formed of the more-noble element.

Abstract: A method includes: constructing a multilayer structure including a first layer of Pt, a first layer of A1 phase FePt on the first layer of Pt, and a second layer of Pt on the layer of FePt, and annealing the multilayer structure to convert the A1 phase FePt to L1o phase FePt.

Abstract: A trilayer magnetoresistive sensor includes first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.

Abstract: A magnetic sensor comprises a sensor stack and magnetic bias elements positioned adjacent each side of the sensor stack. The sensor stack and bias elements have substantially trapezoidal shapes.