Abstract: The present disclosure discloses a method for quantifying a bearing capacity of foundation containing shallow-hidden spherical cavities, comprising: in Step 1, constructing a spatial axisymmetric calculation model for stability analysis of the foundation containing shallow-hidden spherical cavities; in Step 2, solving the model to obtain a general solution which reflects the spatial stress distribution of surrounding rock containing shallow-hidden spherical cavities; in Step 3, obtain a mathematical expression by derivation for calculating the bearing capacity of the foundation containing shallow-hidden spherical cavities; and in Step 4: completing the determination of the foundation bearing capacity. Benefits: This method has many advantages such as comprehensive consideration, high accuracy and reliability of calculation results, and may provide the scientific basis for the development of prevention and control against the instability of the foundation containing shallow-hidden cavities.

Abstract: The present disclosure discloses a color matching evaluation method combining similarity measure and visual perception. The method includes: firstly, constructing an image database with rich color information; extracting main colors from an acquired image using an improved clustering method for color matching; generating a corresponding palette using an intelligent color matching recommendation system, and evaluating a palette similarity using a minimum color difference model; then, recoloring the corresponding image using the generated palette through an image recoloring technology to obtain a recolored image, and calculating a structural similarity between the source image and the recolored image; performing feature level adaptive weighted fusion on the palette similarity and the structural similarity, and performing an eye movement tracking experiment on the source image and the recolored image to obtain visual perception data of the images.

Abstract: This application discloses a method for moving a virtual character's perspective in a virtual environment performed at a terminal. The method includes: displaying a first perspective image of an application program observed using a first perspective direction, the first perspective image including first and second function controls; switching the first perspective image to a second perspective image according to the first perspective movement operation on the first function control, the second perspective image being an image of the virtual environment observed using a second perspective direction; receiving a second perspective movement operation on the second function control while the first function control is in an enabled state; and switching the second perspective image to a third perspective image according to the second perspective movement operation on the second function control, the third perspective image being an image of the virtual environment observed using a third perspective direction.

Abstract: The present disclosure relates to a game interactive control method and apparatus, a storage medium and an electronic device, and relates to the technical field of computers. According to the method, by determining the game intention of the agent according to the game state information, and inputting the game state information, the game communication information and the game intention into the communication prediction model, the target communication content corresponding to the agent is obtained, and then the target communication content is outputted, so that the player character determines a game action to be executed by the agent based on the target communication content. This can not only improve the gaming activity when the real player is battling against the agent, but also enable the real player to know the game intention of the agent so as to cooperate with the agent and improve the gaming quality.

Abstract: Related to are a method and apparatus for game role interaction control, a storage medium, and an electronic device. In the method, a target communication period of an intelligent agent may be dynamically adjusted by the current signal communication information triggered by a game match and the current game state information of the game match, to adjust the frequency of the intelligent agent for sending communication messages in the game match. Therefore, in the case of active communication of real players, the intelligent agent can be prevented from frequently sending communication messages, resulting in a conflict with the communication messages of the real players, and the interference of excessive communication messages on the real players can also be prevented. Moreover, in the case of no communication of the real players, the communication willingness of the real players can be motivated, thereby ensuring a good battle atmosphere for the game match.

Abstract: The present disclosure relates to the technical field of computers, and in particular to a game character control method and apparatus, a storage medium and an electronic device. In the method, game state information of a game match is adjusted according to game alignments to which an intelligent agent and a player character belong, so as to obtain target state information, a target game intention of the intelligent agent is determined according to the target state information, then a target operation of the intelligent agent in the game match is determined according to the target state information and the target game intention, and the target operation executed by the intelligent agent may be adjusted according to different game situations, so that the intelligent agent can flexibly adjust game actions to provide different playing methods in a human-computer battle.

Abstract: A method, apparatus, electronic device and storage medium for combat control are provided. The method comprising: determining, according to current game status data and communication information of the target object, a communicated strategic intention of a target object, wherein the communicated strategic intention characterizes a combat target expressed by the communication information; determining, according to the game status data, an initial strategic intention of a virtual object in response to the game state data; determining, according to the initial strategic intention and the communicated strategic intention, the target strategic intention of the virtual object; determining a response action of the virtual object based on the target strategic intention, and controlling the virtual object to perform the response action.

Abstract: Disclosed is a method for classifying hyperspectral images on the basis of an adaptive multi-scale feature extraction model, the method comprising: establishing a framework comprising the two parts of a scale reference network and a feature extraction network, introducing a condition gate mechanism into the scale reference network, performing determination step-by-step by means of three groups of modules, inputting features into a corresponding scale extraction network, deep mining rich information contained in a hyperspectral remote sensing image, effectively combining features of different scales, improving a classification effect, and generating a fine classification result map.

Abstract: Disclosed is a method for classifying hyperspectral images on the basis of an adaptive multi-scale feature extraction model, the method comprising: establishing a framework comprising the two parts of a scale reference network and a feature extraction network, introducing a condition gate mechanism into the scale reference network, performing determination step-by-step by means of three groups of modules, inputting features into a corresponding scale extraction network, deep mining rich information contained in a hyperspectral remote sensing image, effectively combining features of different scales, improving a classification effect, and generating a fine classification result map.

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a plurality of trenches extending through the interlayer dielectric layer to the semiconductor substrate and comprising a first trench of a PMOS device and a second trench of an NMOS device, a high-k dielectric layer on a bottom and sidewalls of the trenches, a PMOS work function adjustment layer on the high-k dielectric layer in the first trench, an NMOS work function adjustment layer on the high-k dielectric layer in the second trench, and a metal electrode layer on the PMOS work function adjustment layer in the first trench and on the NMOS work function adjustment layer in the second trench.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and including a first trench of a first NMOS device and a second trench of a second NMOS device, and a dielectric layer on sidewalls and a bottom of the trenches, forming an NMOS work function adjustment layer on the dielectric layer, performing a first oxidation treatment on the NMOS work function adjustment layer in the first trench to form a first oxide layer, and a second oxidation treatment on the NMOS work function adjustment layer in the second trench to form a second oxide layer, and forming a metal electrode layer in the trenches. The first oxide layer has an oxygen content lower than that of the second oxide layer.

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a plurality of trenches extending through the interlayer dielectric layer to the semiconductor substrate and comprising a first trench of a PMOS device and a second trench of an NMOS device, a high-k dielectric layer on a bottom and sidewalls of the trenches, a PMOS work function adjustment layer on the high-k dielectric layer in the first trench, an NMOS work function adjustment layer on the high-k dielectric layer in the second trench, and a metal electrode layer on the PMOS work function adjustment layer in the first trench and on the NMOS work function adjustment layer in the second trench.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and having a first trench of a PMOS device and a second trench of an NMOS device, and a high-k dielectric layer on sidewalls and a bottom of the trenches. The method also includes forming a semiconductor layer filling the trenches, removing the semiconductor layer in the first trench, forming a PMOS work function adjustment layer in the first trench and a metal electrode layer on the PMOS work function adjustment layer in the first trench, removing the semiconductor layer in the second trench, and forming an NMOS work function adjustment layer in the second trench and a metal electrode layer on the NMOS work function adjustment layer in the second trench.

Abstract: A method for torsional wave logging in a borehole of a subterranean formation. The method includes obtaining a torsional wave measurement of the borehole, wherein the torsional wave measurement represents characteristics of a torsional wave propagating within a cylindrical layered structure associated with the borehole, wherein the cylindrical layered structure comprises the subterranean formation and a completion of the borehole, analyzing, by a computer processor, the torsional wave measurement to generate a quality measure of the completion, and displaying the quality measure of the completion.

Abstract: Apparatus and method for characterizing a barrier installed in a borehole traversing a formation including locating an acoustic tool with a receiver and a transmitter at a location in the borehole, activating the acoustic tool to form acoustic waveforms, wherein the receiver records the acoustic waveforms, and processing the waveforms to identify barrier parameters as a function of azimuth and depth along the borehole, wherein the waveforms comprise at least two of sonic signals, ultrasonic pulse-echo signals, and ultrasonic pitch-catch signals.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and including a first trench of a first NMOS device and a second trench of a second NMOS device, and a dielectric layer on sidewalls and a bottom of the trenches, forming an NMOS work function adjustment layer on the dielectric layer, performing a first oxidation treatment on the NMOS work function adjustment layer in the first trench to form a first oxide layer, and a second oxidation treatment on the NMOS work function adjustment layer in the second trench to form a second oxide layer, and forming a metal electrode layer in the trenches. The first oxide layer has an oxygen content lower than that of the second oxide layer.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate structure including a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, multiple trenches extending through the interlayer dielectric layer to the semiconductor substrate and having a first trench of a PMOS device and a second trench of an NMOS device, and a high-k dielectric layer on sidewalls and a bottom of the trenches. The method also includes forming a semiconductor layer filling the trenches, removing the semiconductor layer in the first trench, forming a PMOS work function adjustment layer in the first trench and a metal electrode layer on the PMOS work function adjustment layer in the first trench, removing the semiconductor layer in the second trench, and forming an NMOS work function adjustment layer in the second trench and a metal electrode layer on the NMOS work function adjustment layer in the second trench.

Abstract: Techniques involve obtaining acoustic data from an acoustic logging tool, where the acoustic data includes waves reflected from the casing, the annular fill material, the formation, and/or interfaces between any of the casing, the annular fill material, and the formation. A crude casing thickness, tool position (e.g., eccentering), mud sound velocity may be estimated using the acoustic data.

Abstract: The present disclosure provides a memory. The memory includes an array of memory cells arranged as a plurality of rows by a plurality of columns. A memory cell is connected to at least one redundant memory cell in series in a same row for storing same data as the memory cell; and a column of memory cells correspond to at least one redundant column of redundant memory cells wherein each redundant memory cell in the at least one redundant column stores same data as the memory cell in a same row.

Abstract: The present disclosure provides a memory. The memory includes an array of memory cells arranged as a plurality of rows by a plurality of columns. A memory cell is connected to at least one redundant memory cell in series in a same row for storing same data as the memory cell; and a column of memory cells correspond to at least one redundant column of redundant memory cells wherein each redundant memory cell in the at least one redundant column stores same data as the memory cell in a same row.